Proceedings Article10.1145/1837274.1837495
Impact of process variations on emerging memristor
Niu Dimin,Yi Chen,Cong Xu,Yuan Xie +3 more
- 13 Jun 2010
- pp 877-882
158
TL;DR: Two parameters are introduced to measure the fluctuation of the overall internal state (or the resistance) of a Memristor under the impact of process variations and Monte-Carlo simulations are conducted to evaluate the device mismatch effects in the memristor-based memory.
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Abstract: The memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since the first real device was developed by HP labs in 2008. The nano-scale memristive device has the potential to construct some novel computing systems because of its distinctive characters, such as non-volatility, non-linearity, low-power, and good scalability. These electrical characteristics of memristors are mainly determined by the material characteristic and the fabrication process. For example, process variations may cause the deviation of the actual electrical behavior of memristors from the original design and result in the malfunction of the device. Therefore, it is very important to understand and characterize the impact of process variations on the electrical behaviors of the memristor and its implication to the circuit design. In this paper, we analyze the impact of the geometry variations on the electrical characteristics of the memristor. Two parameters - NARD (Normalized Accumulative Resistance Deviation) and NAARD (Normalized Accumulative Absolute Resistance Deviation), are introduced to measure the fluctuation of the overall internal state (or the resistance) of a memristor under the impact of process variations. Based on our analysis, Monte-Carlo simulations are conducted to evaluate the device mismatch effects in the memristor-based memory.
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References
The missing memristor found
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Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Sung Hyun Jo,Kuk-Hwan Kim,Wei Lu +2 more
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Practical Approach to Programmable Analog Circuits With Memristors
Yuriy V. Pershin,M. Di Ventra +1 more
TL;DR: An approach to use memristors (resistors with memory) in programmable analog circuits in which low voltages are applied to memristor during their operation as analog circuit elements and high voltage are used to program the Memristor's states.
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Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
TL;DR: In this paper, the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs was investigated.