Hot electron cooling in Dirac semimetal Cd3As2 due to polar optical phonons.
TL;DR: A theory of hot electron cooling power due to polar optical phonons P op is developed in 3D Dirac semimetal (3DDS) Cd3As2 taking account of hot phonon effect and it is found that P op increases rapidly (slowly) with T e at lower (higher) temperature regime.
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Abstract: A theory of hot electron cooling power due to polar optical phonons P op is developed in 3D Dirac semimetal (3DDS) Cd3As2 taking account of hot phonon effect. Hot phonon distribution N q and P op are investigated as a function of electron temperature T e, electron density n e, and phonon relaxation time [Formula: see text]. It is found that P op increases rapidly (slowly) with T e at lower (higher) temperature regime. Whereas, P op is weakly decreasing with increasing n e. The results are compared with those for three-dimensional electron gas (3DEG) in Cd3As2 semiconductor. Hot phonon effect is found to reduce P op considerably and it is stronger in 3DDS Cd3As2 than in Cd3As2 semiconductor. P op is also compared with the hot electron cooling power due to acoustic phonons P ac. We find that a crossover takes place from P ac dominated cooling at low T e to P op dominated cooling at higher T e. The temperature at which this crossover occurs shifts towards higher values with the increase of n e. Also, hot electron energy relaxation time [Formula: see text] is discussed. It is suggested that [Formula: see text] can be tuned to achieve faster or slower energy loss for suitable applications of Cd3As2.
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Citations
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