Proceedings Article10.1109/PRIMEASIA.2013.6731178
High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model
Jyoti Ranjan Sahoo,Harshit Agarwal,Chandan Yadav,Pragya Kushwaha,Sourabh Khandelwal,Renaud Gillon,Yogesh Singh Chauhan +6 more
- 01 Dec 2013
- pp 56-61
12
TL;DR: In this article, the authors reported high voltage MOSFET modeling using BSIM6 model, which has two components - intrinsic MOS-FET channel of LDMOS and a drift region modeled by non-linear drift resistance.
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Abstract: Here, we report high voltage MOSFET modeling using BSIM6 model. The model has two components - intrinsic MOSFET channel of LDMOS modeled by BSIM6 and a drift region modeled by non-linear drift resistance. BSIM6 is the next generation bulk MOSFET model in BSIM family of models. It also have the model of Self Heating Effect (SHE) which is very important for high power devices like LDMOS. This model shows good behaviour over wide range of gate and drain bias conditions including convergence. Some of the effects like Quasi-saturation, self-heating and impact ionization are modelled by the combination of BSIM6 and drift-resistance models. We have validated this model on the simulated characteristics generated by TCAD and then, on the measured characteristics of a LDMOS device, where it shows excellent accuracy over entire bias range.
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Citations
Compact modeling of high-voltage LDMOS devices including quasi-saturation
A.C.T. Aarts,W.J. Kloosterman +1 more
- 01 Jan 2006
TL;DR: In this paper, the surface potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region.
70
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
37
Robust Compact Model of High-Voltage MOSFET’s Drift Region
TL;DR: In this article , a voltage-dependent formulation for highvoltage (HV) and low-voltage MOSFETs is proposed to capture the carrier velocity saturation effect in the drift region of HV transistors.
16
An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling
TL;DR: In this paper, the authors used a tandem FET (two MOS) model of an LDMOS to explore the physical origin of anomalous hot carrier degradation in power transistors and establish the general principle needed to restore the universality of the degradation kinetics.
10
Robust Compact Model of High-Voltage MOSFET’s Drift Region
Girish Pahwa,Ayushi Sharma,Ravi Goel,Garima Gill,Harshit Agarwal,Yogesh Singh Chauhan,Chenming Hu +6 more
TL;DR: In this paper , the carrier velocity saturation effect in the drift region of high-voltage (HV) MOSFETs has been studied in SPICE simulations with the existing current-dependent formulation in Berkeley Short Channel-IGFET model.
9
References
•Book
Operation and modeling of the MOS transistor
Yannis Tsividis
- 01 Jan 1987
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
3.6K
HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation
Mitiko Miura-Mattausch,Norio Sadachika,Dondee Navarro,G. Suzuki,Y. Takeda,Masataka Miyake,T. Warabino,Y. Mizukane,R. Inagaki,T. Ezaki,Hans Jurgen Mattausch,Tatsuya Ohguro,Takahiro Iizuka,M. Taguchi,S. Kumashiro,S. Miyamoto +15 more
TL;DR: In this paper, the authors proposed the HiSIM model, which solves the channel surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximations without any computer run-time penalty.
120
LDMOS Technology for RF Power Amplifiers
TL;DR: Laterally diffused metal-oxide-semiconductor (LDMOS) technology has been the device of choice for RF power applications for more than one decade as mentioned in this paper and has achieved state-of-the-art performance for a wide range of class AB and pulsed applications.
91
Compact modeling of high-voltage LDMOS devices including quasi-saturation
A.C.T. Aarts,W.J. Kloosterman +1 more
TL;DR: In this article, the surface potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region.
Compact modeling of high-voltage LDMOS devices including quasi-saturation
A.C.T. Aarts,W.J. Kloosterman +1 more
- 01 Jan 2006
TL;DR: In this paper, the surface potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region.
70