Journal Article10.1109/TED.2006.877870
High-Quality $hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$ MIM Capacitors for RF Applications
Ch. Wenger,Gunther Lippert,R. Sorge,Thomas Schroeder,Anil U. Mane,G. Lupina,J. Dabrowski,Peter Zaumseil,X. Fan,L. Oberbeck,U. Schroeder,H.-J. MussigMussig +11 more
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TL;DR: In this article, the electrical characteristics of layered Al2O3/Pr2O/3/Al 2O3 metal-insulator-metal (MIM) capacitors for RF device applications are presented for the first time.
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Abstract: The electrical characteristics of layered Al2O3 /Pr2O3/Al2O3 metal-insulator-metal (MIM) capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4-nm Al2O3/8-nm Pr2O3/4-nm Al2O3 shows a high capacitance density of 5.7 fF/mum2, a low leakage current density of 5times10-9 A/cm2 at 1 V, and an excellent dielectric loss behavior over the studied frequency range
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Citations
Metal-layer capacitors in the 65 nm CMOS process and the application for low-leakage power-rail ESD clamp circuit
Po Yen Chiu,Ming-Dou Ker +1 more
TL;DR: The MOM capacitor can be used instead of MOS capacitor to avoid the gate leakage issue of thin-oxide devices in nanoscale CMOS processes and could replace MIM capacitor gradually in general integrated circuit (IC) applications.
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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications
Thomas Schroeder,G. Lupina,R. Sohal,Gunther Lippert,Ch. Wenger,Olaf Seifarth,Massimo Tallarida,Dieter Schmeisser +7 more
TL;DR: In this article, high quality PrAlO3 metal-insulator-metal capacitors were processed with a dielectric constant of 19, three times higher than in the case of Al2O3 reference cells.
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Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition
Joo Young Choi,Chang Hak Choi,Kyung Hoon Cho,Tae Geun Seong,Sahn Nahm,Chong Yun Kang,Seok-Jin Yoon,Jong-Hee Kim +7 more
TL;DR: In this paper, the Schottky emission was suggested as the leakage current mechanism of the Bi 4 Ti 3 O 12 film, which showed that Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies.
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Electrical Properties of Amorphous $\hbox{Bi}_{5} \hbox{Nb}_{3}\hbox{O}_{15}$ Thin Film for RF MIM Capacitors
Kyung Hoon Cho,Chang-Hak Choi,Kyoung Pyo Hong,Joo-Young Choi,Younghun Jeong,Sahn Nahm,Chong Yun Kang,Seok-Jin Yoon,Hwack-Joo Lee +8 more
TL;DR: Amorphous Bi5Nb3O15(B5 N3) film was grown at 300degC and showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz as discussed by the authors.
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Investigation on the Electric Properties of $ \hbox{Bi}_{1.5}\hbox{ZnNb}_{1.5}\hbox{O}_{7}$ Thin Films Grown on TiN Substrate for MIM Capacitors
TL;DR: In this article, a small crystalline phase was formed in the Bi1.5ZnNb1.7 (BZN) film grown at 300degC on TiN/SiO2/Si substrate using RF-magnetron sputtering, which exhibited a high capacitance density of 13.6 fF/mum2 at 100 kHz with a dielectric constant of 71.
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