Journal Article10.1016/J.TSF.2011.12.083
High efficiency a-Si: H/a-Si:H solar cell with a tunnel recombination junction and a n-type μc-Si:H layer
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TL;DR: In this paper, the authors investigated the influence of the thickness of the top intrinsic amorphous silicon (i-a-Si:H) layer with regard to short circuit current density and current matching between the top and bottom cells.
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About: This article is published in Thin Solid Films. The article was published on 29 Feb 2012. The article focuses on the topics: Solar cell & Amorphous silicon.
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Citations
Highly flexible radial tandem junction thin film solar cells with excellent power-to-weight ratio
Shaobo Zhang,Ting Zhang,Zongguang Liu,Junzhuan Wang,Linwei Yu,Jun Xu,Kunji Chen,Pere Roca i Cabarrocas +7 more
TL;DR: In this article, a radial tandem junction (RTJ) thin film solar cell has been demonstrated, for the first time, over SiNWs, which consist of radially deposited p-i-n multilayers with hydrogenated amorphous silicon (a-SiGe:H) absorption layers in the outer and the inner junctions, respectively.
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Development of optimized n-μc-Si:H/n-a-Si:H bilayer and its application for improving the performance of single junction a-Si solar cells
TL;DR: In this paper, the authors reported the results of deposition of n-type hydrogenated microcrystalline silicon (n-μc-Si:H) layers with different deposition parameters.
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Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell
TL;DR: In this paper, the simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell, and the two-step current matching method and the control variate method are employed in the simulation.
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Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells
TL;DR: In this paper, a widebandgap amorphous silicon (a-Si:H) and a-SiOx:H absorber was developed by extremely decreasing deposition temperature to as low as 100 °C. By adjusting hydrogen and carbon dioxide gas flow rates, device quality absorbers and thus suitable single junction cells were obtained.
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Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications
TL;DR: In this paper, a-SiH/μc-Si:H tandem junction thin-film solar cells with aluminum-doped zinc oxide (AZO) thin films were used as front contact electrodes.
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References
Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler,C. R. Wronski +1 more
TL;DR: In this paper, a new reversible photoelectronic effect was reported for amorphous Si produced by glow discharge of SiH4, where long exposure to light decreases both the photoconductivity and the dark conductivity.
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Stability of n‐i‐p amorphous silicon solar cells
TL;DR: In this article, amorphous silicon indium tin oxide/n−i−p/stainless steel solar cells were tested for stability and showed a small initial drop to 5%, followed by a weak logarithmic decay that predicts only ∼20% further decrease in efficiency after 20 years in sunlight.
202
High quality conductive gallium-doped zinc oxide films deposited at room temperature
Elvira Fortunato,V. Assunção,Alexandra Gonçalves,A. Marques,Hugo Águas,Luís Pereira,Isabel M.P.L.V.O. Ferreira,Paula M. Vilarinho,Rodrigo Martins +8 more
TL;DR: In this paper, transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by rf sputtering at room temperature, achieving a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2, which is very close to the value reported for bulk material.
121
Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate
TL;DR: The contribution of higher-silane related reactive species (HSRS) during film growth is suggested as a key event to increase the degree of photo-induced degradation in the resulting a-Si:H through an incorporation of excess Si-H 2 bonds in the network as far as the substrate temperature is kept constant.
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Microcrystalline n-i-p tunnel junction in a-Si:H/a-Si:H tandem cells
TL;DR: Rubinelli et al. as mentioned in this paper presented a model of the Instituto de Desarrollo Tecnologico para la Industria Quimica (ITE-QUIMICA).