1. What are the contributions in "High curie temperatures in ferromagnetic cr-doped aln thin films" ?
The authors show that the Curie temperature of Al12xCrxN for x50.
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High Curie temperatures in ferromagnetic Cr-doped AlN thin films
TL;DR: In this article, the Curie temperature of Al1−xCrxN for x=0.027 is shown to be greater than 900 K in samples with chromium contents as low as x = 0.027.
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Abstract: Al1−xCrxN thin films with 0.02⩽x⩽0.1 were deposited by reactive co-sputtering onto c-plane (001) sapphire. Room-temperature ferromagnetism with a coercive field of 85 Oe was observed in samples with chromium contents as low as x=0.027 (2.7%). With increasing Cr content the mean magnetic moment is strongly suppressed, with a maximum saturation moment of 0.62 and 0.71 μB per Cr atom at 300 and 50 K, respectively. We show that the Curie temperature of Al1−xCrxN for x=0.027 is greater than 900 K.
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Figures
FIG. 4. Effective magnetic moment per Cr atom for Al12xCrxN film as a function of Cr concentration measured at 300 K; different growth runs are distinguished by different symbols. The inset shows the same data expressed as moment per unit volume. 
FIG. 3. Temperature dependence of the effective saturation magnetic moment (MS), magnetic remanent magnetization (MR), and coercive field (Hc) of Al12xCrxN with x50.027. 
FIG. 2. Magnetic field dependence of the magnetization of Al12xCrxN films for x50.027 and 0.061 at 300 K. 
FIG. 1. X-ray diffraction patterns of Al12xCrxN samples with varying Cr composition deposited onc-plane ~001! sapphire a heater temperature of 940 °C.
Citations
Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
TL;DR: In this paper, the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics, are discussed.
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Magnetism in dilute magnetic oxide thin films based on SnO2
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TL;DR: In this article, the donor impurity-band model of ferromagnetism in semiconductors and the magnetic defect model were discussed in relation to (a) the donor-impurity band model and (b) the magnetic defects model.
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References
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
8K
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
2.4K
Diluted magnetic III-V semiconductors
TL;DR: The nature of Mn impurity is discussed, and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given, together with resulting magnetooptical properties and some selected problems of quantum structures based on III—V diluted magnetic semiconductors are discussed.
1.1K
Study of diluted magnetic semiconductor: Co-doped ZnO
TL;DR: In this article, the lattice constant of c axis of wurtzite Zn1−xCoxO follows Vergard's law for 0
706
Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors
TL;DR: In this article, material design of GaN-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation, and the electronic structure of 3d transition metal-atom-doped GaN was calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation.
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