Journal Article10.1016/0022-0248(90)90382-U
Growth process of III–V compound semiconductors by migration-enhanced epitaxy
149
TL;DR: In this article, the growth mechanism of GaAs and AlGaAs in migration-enhanced epitaxy was investigated by RHEED observation and optical scattering measurements, and the observed step-flow growth was explained by considering the different chemical characteristics of the steps along the [110] and [ 1 10] directions.
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About: This article is published in Journal of Crystal Growth. The article was published on 01 Oct 1990. The article focuses on the topics: Metalorganic vapour phase epitaxy & Molecular beam epitaxy.
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Citations
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
1.5K
Migration-Enhanced Epitaxy of GaAs and AlGaAs
TL;DR: In this paper, the surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free or low As pressure atmosphere, which is utilized by alternately supplying Ga and/or Al and AS4 to the substrate surface for growing atomically-flat GaAs-AlGaAs heterointerfaces, and also for growing high quality GaAs and AlGaAs layers at very low substrate temperatures.
415
Molecular Beam Epitaxy
Marian A. Herman,Wolfgang Richter,Helmut Sitter +2 more
- 01 Jan 1989
TL;DR: In this article, a more precise control of beam fluxes and growth conditions is proposed for MBE, which is performed under conditions far from thermodynamic equilibrium and is governed mainly by the kinetics of the surface processes occurring when the impinging beams react with the outermost atomic layers of the substrate crystal.
237
Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition
TL;DR: It is shown that the primary reconstructions that occur on (001) GaAs in ultrahigh vacuum (UHV) also occur under AP H 2, He, and N 2, demonstrating that dimer formation is not restricted to surfaces in UHV.
213
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
Edwin L. Piner,M. K. Behbehani,Nadia A. El-Masry,F. G. McIntosh,John C. Roberts,Karim S. Boutros,Salah M. Bedair +6 more
TL;DR: In this article, the InN percent in metalorganic chemical vapor deposition (MOCVD) and atomic layer epitaxy (ALE) grown InGaN was found to be significantly influenced by the amount of hydrogen flowing into the reactor.
145
References
One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
TL;DR: In this paper, the authors examined the correlation of the interface roughness with the measured intensity oscillations of reflective high energy electron diffraction (RHEED) during the growth of 10 or more atomic layers and found that the growth interruption of 10−100 seconds prior to the interface formation is effective in achieving an atomically flat interface.
231
•Journal Article
Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
TL;DR: In this paper, the authors report the successful growth of GaAs/AlAs superlattices having interface planes tilted with respect to the substrate surface plane, and demonstrate the growth of quantum wire-like structures produced by placing short sections of TSL between horizontal layers of AlAs.
231
(AlAs)1/2(GaAs)1/2 fractional‐layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition
Takashi Fukui,Hisao Saito +1 more
TL;DR: In this paper, the periodic structure in the lateral [110] direction is analyzed by x-ray superlattice satellite diffraction and high-resolution transmission electron microscopy (TEM).
199
Dynamic RHEED observations of the MBE growth of GaAs
TL;DR: In this article, the specular beam intensity in RHEED patterns from static and growing GaAs surfaces has been analyzed and the results have provided further understanding of growth dynamics and surface disorder, respectively.
187
The Strengths of Metal-to-Carbon Bonds
TL;DR: In this article, the strengths of metal-to-carbon bonds are discussed and the Allen equation modified by the addition of one or more terms to allow for steric repulsions where necessary, has been shown to reproduce very satisfactorily, the available heats of formation and ΔH a ° values of paraffin hydrocarbons from CH 4 through octanes and nonanes.
126