Journal Article10.1063/1.1568159
Growth and characterization of TiO2 as a barrier for spin-polarized tunneling
Manuel Bibes,Martin Bowen,A. Barthélémy,Abdelmadjid Anane,K. Bouzehouane,C. Carrétéro,Eric Jacquet,J.-P. Contour,Olivier Durand +8 more
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TL;DR: In this article, the authors report on the elaboration and characterization of tunnel junctions based on La2/3Sr1/3MnO3 and TiO2.
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Abstract: We report on the elaboration and characterization of tunnel junctions based on La2/3Sr1/3MnO3 and TiO2. The structural analysis shows that TiO2 grows epitaxially in the anatase phase and forms flat interfaces with the adjacent layers. Resistance maps of a La2/3Sr1/3MnO3/TiO2 bilayer reveal a homogeneous resistance level. After patterning tunnel junctions, we obtain a large positive tunneling magnetoresistance (TMR) at low temperature for La2/3Sr1/3MnO3/TiO2/La2/3Sr1/3MnO3 junctions and a negative TMR in the case of La2/3Sr1/3MnO3/TiO2/Co. This negative TMR reflects a negative spin polarization of Co at the interface with TiO2, in analogy with recent experimental results for the Co/SrTiO3 interface.
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Citations
Ultrathin oxide films and interfaces for electronics and spintronics
TL;DR: In this article, the use of ultrathin films of insulating oxides as barriers for tunnel junctions is discussed, and the possibility of exploiting the multifunctional character of some oxides in order to realize active tunnel barriers is discussed.
515
Oxide spintronics
Manuel Bibes,Agnès Barthélémy +1 more
TL;DR: In this article, the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronic devices.
378
BiFeO3 epitaxial thin films and devices: past, present and future
TL;DR: How thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure is discussed, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3.
344
Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films
Hélène Béa,Manuel Bibes,Salia Cherifi,Frithjof Nolting,Bénédicte Warot-Fonrose,Stéphane Fusil,Gervasi Herranz,Cyrile Deranlot,Eric Jacquet,Karim Bouzehouane,Agnès Barthélémy +10 more
TL;DR: In this article, the functionalization of multiferroic BiFeO3 epitaxial films for spintronics has been described and shown to be robust to magnetic field cycling, with no indications of training.
Self‐Location and Other‐Location
TL;DR: This article proposed to use multi-centered worlds, which one can think of as a way a group of individuals might be, to characterize the contents of self-locating attitudes like imagining, dreaming, and wishing.
References
Tunneling between ferromagnetic films
TL;DR: In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
4.1K
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
Yuji Matsumoto,Makoto Murakami,T. Shono,Tetsuya Hasegawa,Tomoteru Fukumura,Masashi Kawasaki,Parhat Ahmet,Toyohiro Chikyow,Shin-ya Koshihara,Hideomi Koinuma +9 more
TL;DR: The observation of transparent ferromagnetism in cobalt-doped anatase thin films with the concentration of cobalt between 0 and 8% is reported, indicating the existence of ferromagnetic long-range ordering.
2.5K
Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
TL;DR: In this paper, first-principles based calculations of the tunneling conductance and magnetoconductance of epitaxial ''mathrm{Fe}(100)|\mathm{MgO''(100), ''mgO''.
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
Martin Bowen,Manuel Bibes,Alain Barthélémy,J.-P. Contour,Abdelmadjid Anane,Y. Lemaitre,Albert Fert +6 more
TL;DR: In this paper, a magnetoresistance ratio of more than 1800% is obtained at 4 K, from which they infer an electrode spin polarization of at least 95% and demonstrate the half-metallic nature of mixed-valence manganites and demonstrates their capability as a spin analyzer.
701
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
Martin Bowen,Manuel Bibes,Alain Barthélémy,J.-P. Contour,Abdelmadjid Anane,Y. Lemaitre,Albert Fert +6 more
TL;DR: In this paper, a magnetoresistance ratio of more than 1800 % is obtained at 4K, from which an electrode spin polarization of at least 95 % is inferred, which strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates its capability as a spin analyzer.
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