Journal Article10.1038/S41586-019-1573-9
Graphene and two-dimensional materials for silicon technology.
Deji Akinwande,Cedric Huyghebaert,Ching-Hua Wang,Martha I. Serna,Stijn Goossens,Lain-Jong Li,H.-S. Philip Wong,H.-S. Philip Wong,Frank H. L. Koppens,Frank H. L. Koppens +9 more
1.2K
TL;DR: The opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems are reviewed, and the prospects for computational and non-computational applications are considered.
read more
Abstract: The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications. Progress in integrating atomically thin two-dimensional materials with silicon-based technology is reviewed, together with the associated opportunities and challenges, and a roadmap for future applications is presented.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Exploration of Graphene as Emerging 2D Material and Its Applications: A Review
. Malvika,Jagritee Talukdar,Bijit Choudhuri,Gopal Rawat,Kavicharan Mummaneni +4 more
- 01 Jan 2024
Performance of Two-Dimensional MoS<sub>2</sub> Field-Effect Transistor in the Presence of Oxide-Channel Imperfection
11 Dec 2022
TL;DR: In this article , the authors proposed a more accurate description of the interface trap in the MoS field effect transistor using a quantum-mechanical modeling framework and showed that charge trapping in interface trap causes substantial degradation in the drive current for high gate biases, whereas source-to-drain tunneling through trap limits the performance for low gate biases.
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors
TL;DR: In this paper , the authors studied the impact of the number of transport modes for carrier injection on the Schottky barrier resistance of 2-D semiconductors and showed that even for near-zero SB height, the number is not a limiting factor for aggressive carrier injection when it is relatively high.
Growth mechanisms of interfacial carbon layers at the epitaxial Al2O3(0001)/Cu(111) interface as application for epitaxial film lift-off
TL;DR: In this paper , an atmospheric pressure chemical vapor deposition is used to directly synthesize wafer-scale multilayer carbon at the interface between the Al2O3(0001) substrate and epitaxial Cu(111) layer.
References
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
15.2K
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Frank H. L. Koppens,Thomas Mueller,Phaedon Avouris,Andrea C. Ferrari,Miriam S. Vitiello,Marco Polini +5 more
TL;DR: An overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of differentTwo-dimensional crystals or of two- dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides are provided.
3.6K
Design of ion-implanted MOSFET's with very small physical dimensions
TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.