Gate-induced insulating state in bilayer graphene devices
Jeroen B. Oostinga,Hubert B. Heersche,Xinglan Liu,Alberto F. Morpurgo,Lieven M. K. Vandersypen +4 more
1.8K
TL;DR: This work demonstrates the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane.
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Abstract: The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
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Citations
Effect of Coulomb interactions on the physical observables of graphene
TL;DR: In this article, the effect of electron-electron interactions on the physics of a neutral graphene system at low energies was investigated and the role of Fermi velocity as the only free parameter determining the transport and electronic properties of the system was emphasized.
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Tunable band gaps in graphene/GaN van der Waals heterostructures.
TL;DR: The results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures, and a band gap of up to 334 meV is obtained under a perpendicular electric field.
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•Posted Content
Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
TL;DR: In this paper, the authors reported the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspended ABC-trilayer graphene.
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Thermoelectric and thermal transport in bilayer graphene systems
TL;DR: In this article, the disorder effect on thermoelectric and thermal transport for bilayer graphene under a strong perpendicular magnetic field was numerically studied, and it was shown that the transport properties are consistent with those of a band insulator, i.e., the Nernst signal has a peak at the central Landau level with the value of $k_B/e$ and changes sign near other LLs while the thermopower has an opposite behavior.
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The Coulomb problem
Mikhail I. Katsnelson
- 01 Mar 2020
TL;DR: In this paper, the Hartree-Fock theory for massless Dirac electrons and their Coulomb interaction essentially renormalizes Fermi velocity in such a way that Dirac cone is, strictly speaking, no more cone.
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TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Two-dimensional gas of massless Dirac fermions in graphene
Kostya S. Novoselov,A. K. Geim,Sergey V. Morozov,Da Jiang,Mikhail I. Katsnelson,Irina V. Grigorieva,S. V. Dubonos,A. A. Firsov +7 more
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Experimental observation of the quantum Hall effect and Berry's phase in graphene
TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
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•Journal Article
Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.