Gate-induced insulating state in bilayer graphene devices
Jeroen B. Oostinga,Hubert B. Heersche,Xinglan Liu,Alberto F. Morpurgo,Lieven M. K. Vandersypen +4 more
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TL;DR: This work demonstrates the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane.
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Abstract: The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
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Citations
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Controlled Synthesis and Scanning Tunneling Microscopy Study of Graphene and Graphene-Based Heterostructures
Mengxi Liu
- 10 Oct 2017
TL;DR: In this article, the authors proposed a non-Bernal-stacked bilayer graphene and designed fabrication of hexagonal boron nitride-graphene heterostructure and the electronic structure on the interface.
7
On distance variation effects on graphene bilayers
TL;DR: In this article, the opening of the energy gap and the total energy of the graphene-like bilayers are investigated using ab initio calculations using a model consisting of a static single layer of graphene interacting with an extra dynamic one placed at a varying vertical distance d in the stacking arrangement.
7
Bilayer honeycomb lattice with ultracold atoms: Multiple Fermi surfaces and incommensurate spin density wave instability
TL;DR: In this paper, an experimental setup using ultracold atoms to implement a bilayer honeycomb lattice with Bernal stacking was proposed, where fermions placed in this lattice formed an annular Fermi sea.
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Temperature effect of the bound magnetopolaron on the bandgap in monolayer graphene
TL;DR: In this article, the authors used quantum statistical theory to study the temperature effect of the bound magnetopolaron on the bandgap in monolayer graphene and derived the average number of acoustic phonons of ground state and the energy gap of MG.
7
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Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
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