Gate-induced insulating state in bilayer graphene devices
Jeroen B. Oostinga,Hubert B. Heersche,Xinglan Liu,Alberto F. Morpurgo,Lieven M. K. Vandersypen +4 more
1.8K
TL;DR: This work demonstrates the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane.
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Abstract: The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
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Citations
First-principles prediction on silicene-based heterobilayers as a promising candidate for FET
TL;DR: In this paper, the structural and electronic properties of silicene/silicane and HBLs were investigated by using first-principles methods, and it was shown that the silicenes interact overall with silicane (germanene) with a binding energy of −−50∼−70 ǫ per Si (Ge) atom, suggesting a weakly van der Waals interaction between silice and substrate.
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Electronic transport in graphene: p-n junctions, shot noise, and nanoribbons
James R. Williams
- 01 Dec 2009
TL;DR: In this article, the authors describe six experiments that elucidate some interesting physical properties and technological applications of graphene, with an emphasis on graphene-based p-n junctions, and a technique for the creation of high-quality p n junctions of graphene is described.
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Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics
TL;DR: In this paper, a wide bandgap was induced in bilayer graphene using a perpendicular electric field and a self-assembled gate insulator was used to apply a large electric field.
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Efficient n-type doping in epitaxial graphene through strong lateral orbital hybridization of Ti adsorbate
Jhih Wei Chen,Hao Chun Huang,Domenica Convertino,Camilla Coletti,Lo-Yueh Chang,Hung-Wei Shiu,Cheng Maw Cheng,Ming-Fa Lin,Stefan Heun,Forest Shih-Sen Chien,Yi-Chun Chen,Chia Hao Chen,Chung Lin Wu +12 more
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References
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TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Two-dimensional gas of massless Dirac fermions in graphene
Kostya S. Novoselov,A. K. Geim,Sergey V. Morozov,Da Jiang,Mikhail I. Katsnelson,Irina V. Grigorieva,S. V. Dubonos,A. A. Firsov +7 more
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Experimental observation of the quantum Hall effect and Berry's phase in graphene
TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
13.6K
•Journal Article
Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.