Gate-induced insulating state in bilayer graphene devices
Jeroen B. Oostinga,Hubert B. Heersche,Xinglan Liu,Alberto F. Morpurgo,Lieven M. K. Vandersypen +4 more
1.8K
TL;DR: This work demonstrates the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane.
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Abstract: The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.
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Citations
Using the G' Raman cross-section to understand the phonon dynamics in bilayer graphene systems.
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TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Experimental observation of the quantum Hall effect and Berry's phase in graphene
TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
13.6K
•Journal Article
Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.