Patent
Gas processing apparatus and gas processing method
Shigeru Kasai,Norihiko Yamamoto,Masayuki Tanaka +2 more
- 08 Dec 2008
10
TL;DR: In this article, a uniform gas supply to a substrate is provided, and it is possible to perform uniform gas processing with uniform gas input and output, and uniform gas discharging to the peripheral part of the substrate.
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Abstract: A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2 . The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.
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Citations
Patent
Gas Supplying unit and substrate processing apparatus
Hisashi Gomi,Tetsuya Saito,Takashi Kakegawa,Mase Takahisa,Koizumi Makoto,Kunihiro Tada,Satoshi Wakabayashi,Kensaku Narushima,Cheng Fang +8 more
- 27 Oct 2006
TL;DR: In this paper, a gas supplying unit is arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate, and a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container.
96
Patent
Coating apparatus and coating method
Yoshikazu Moriyama,Kunihiko Suzuki,Hironobu Hirata +2 more
- 23 Jul 2009
TL;DR: In this article, a distributor plate is disposed upstream of a silicon wafer relative to the direction of flow of reactive gas, and a cooling gas passes through the second through-hole 104 b.
22
Patent
Gas injection apparatus and substrate processing apparatus using same
Jung-Hwan Lee,Park Woo-Young,Tae-Ho Hahm +2 more
- 24 Aug 2010
TL;DR: In this paper, a gas injection apparatus and a substrate processing apparatus using the same is described, where the gas injection unit is installed at an upper part of a substrate supporting portion for supporting a plurality of substrates which is rotatably installed in an inside chamber.
21
Patent
Device and process for chemical vapor phase treatment
Christophe Borean,Jean Luc Delcarri +1 more
- 22 Apr 2009
TL;DR: In this article, a gas inlet for vapor phase deposition was used for treating substrates, where a substrate holder was positioned in the chamber and the upper wall of the chamber was electrically conducting and insulated relative to the substrate holder.
16
Patent
Film formation apparatus and film formation method
Hideki Ito,Suzuki Kunihiko,Hidekazu Tsuchida,Isaho Kamata,Ito Masahiko,Fujibayashi Hiroaki,Masami Naito,Ayumu Adachi,Koichi Nishikawa +8 more
- 29 Aug 2014
TL;DR: In this paper, a cylindrical lintern provided inside of a sidewall of a film formation chamber was described. But the lintern was not used in the case of the first gas ejection hole.
12
References
Patent
Chemical vapor deposition chamber
Ashok Sinha,Mei Chang,Ilya Perlov,Karl A. Littau,Alan F. Morrison,Lawrence Chung-Lai Lei +5 more
- 31 Mar 1994
TL;DR: In this article, a chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing, and a detection system for detecting the presence of misaligned, cracked or warped substrates in the chamber.
508
Patent
Shower head and film forming apparatus using the same
Yuichiro Fujikawa,Tatsuo Hatano,Seishi Murakami +2 more
- 18 Apr 1996
TL;DR: In this paper, a metal CVD apparatus has a raw gas passage and a reduction gas passage for independently and respectively supplying the raw gas and the reduction gas into a process chamber.
484
Patent
Integration of remote plasma generator with semiconductor processing chamber
Karthik Janakiraman,Kelly Fong,Chen-An Chen,Paul Le,Pan Rong,Shankar Venkataraman +5 more
- 28 Apr 2000
TL;DR: In this paper, a self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes.
400
Patent
Method of delivering gas into reaction chamber and shower head used to deliver gas
Yun-sook Chae,In-Sang Jeon,Sang-Bom Kang,Sang-In Lee,Kyu-wan Ryu +4 more
- 20 Dec 1999
TL;DR: In this article, a method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles.
368
Patent
A programmable multizone gas injector for single-wafer semiconductor processing equipment
Mehrdad M. Moslehi,Cecil J. Davis,Robert T. Matthews +2 more
- 29 Dec 1992
TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.
363