Gas injection slit nozzle for a plasma process reactor

Patent

Gas injection slit nozzle for a plasma process reactor

- 09 Jul 1996

276

TL;DR: In this paper, a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection device having a gas supply containing an etchant species in a gas, an opening in the chamber housing.

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Citations

Patent

Electrical biasing of gas introduction means of plasma apparatus

Jeffrey Shane Reiter

- 29 Mar 2004

TL;DR: In this article, a method of treating or processing at least one substrate/workpiece in a plasma comprises steps of: (a) providing an apparatus comprising a chamber defining an interior space; mounting/positioning at least 1 substrate/piece in the interior space, injecting gas(es) into the interior spaces by means of an electrically isolated gas supply, generating a plasma in the internal space; applying a bias potential to the gas supply means to suppress plasma formation at the at least single outlet orifice; and (b) treating/processing the at most one substrate or

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4

Patent

Nozzle and plasma apparatus incorporating the nozzle

Ahn-Sik Moon, +1 more

- 13 Jan 2006

TL;DR: In this paper, improved nozzles suitable for injecting source gases or other gases into a plasma chamber were presented, in which the gas is conveyed along a single passage or channel to an outlet region at which point the single channel is divided into a plurality of outlet channels.

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4

Patent

Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall

Madhavi R. Chandrachood, +6 more

- 26 Oct 2015

TL;DR: A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled as mentioned in this paper, which is called a plasminar plasmon.

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4

Patent

Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ

Stefan Muthmann, +4 more

- 07 Jul 2011

TL;DR: In this paper, the authors propose a method for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed at the side lacing the layer.

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3

Patent

Film removal method and apparatus

Chang Chia Chiang, +3 more

- 01 Apr 2008

TL;DR: In this paper, a film removal method and apparatus for removing a film from a substrate is described, which comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the generator, and sucking a byproduct of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as

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3

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References

Patent

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

David Nin-Kou Wang, +8 more

- 19 Dec 1986

TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.

...read moreread less

685

Patent

A programmable multizone gas injector for single-wafer semiconductor processing equipment

Mehrdad M. Moslehi, +2 more

- 29 Dec 1992

TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.

...read moreread less

363

Patent

Composite electrode for plasma processes

Raymond L. Degner, +1 more

- 18 Sep 1990

TL;DR: An electrode assembly for a plasma reactor, such as a plasma etch or plasmaenhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof as mentioned in this paper.

...read moreread less

261

Patent

Plasma reactor with programmable reactant gas distribution

Hongching Shan

- 07 Jun 1995

TL;DR: In this paper, a plasma reactor for processing a semiconductor wafer inside a vacuum chamber has an array of gas distribution orifices in said chamber facing respective underlying portions of a top surface of said wafer, a gas flow supply, apparatus for individually coupling gas to respective ones of said gas flow flow supply at respective individual gas flow rates, and apparatus for igniting a plasma inside the vacuum chamber from gases contained therein for processing said Wafer.

...read moreread less

216

Patent

Chemical vapor deposition reactor and method of operation

Imad Mahawili

- 28 Jul 1989

TL;DR: In this article, a chemical vapor deposition (CVD) reactor and method is described, where a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate.

...read moreread less

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