Patent
Gas injection slit nozzle for a plasma process reactor
Dan Maydan,Steve S. Y. Mak,Donald J. K. Olgado,Gerald Zheyao Yin,Timothy D. Driscoll,James S. Papanu,Avi Tepman +6 more
- 09 Jul 1996
276
TL;DR: In this paper, a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection device having a gas supply containing an etchant species in a gas, an opening in the chamber housing.
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Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
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Citations
Patent
Plasma reactor for processing a workpiece and having a tunable cathode
Richard Lewington,Michael N. Grimbergen,Khiem K. Nguyen,Darin Bivens,Madhavi R. Chandrachood,Ashok Kumar +5 more
- 30 Oct 2006
TL;DR: In this article, a plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer, which includes a vacuum chamber having a ceiling and a sidewall.
11
Patent
Apparatus for removing heat from injection devices and method of assembling same
Kenneth M. Sprouse,Shahram Farhangi,Robert M. Saxelby,David R. Matthews +3 more
- 11 Aug 2010
TL;DR: In this paper, a method of assembling an injection device for use in a reactor injector feed assembly includes extending the injection device at least partially into a cavity, and coupling at least one coolant distribution device in flow communication with the plurality of cooling channels.
11
Patent
Gas processing apparatus and gas processing method
Shigeru Kasai,Norihiko Yamamoto,Masayuki Tanaka +2 more
- 08 Dec 2008
TL;DR: In this article, a uniform gas supply to a substrate is provided, and it is possible to perform uniform gas processing with uniform gas input and output, and uniform gas discharging to the peripheral part of the substrate.
10
Patent
Semiconductor substrate processing apparatus including uniformity baffles
Arun Keshavamurthy,Bart van Schravendijk,David G. Cohen +2 more
- 18 Dec 2014
TL;DR: In this article, a semiconductor substrate processing apparatus for processing semiconductor substrates includes a showerhead module delivering process gas through a faceplate having gas passages therethrough from the process gas source to a processing zone of the processing apparatus wherein individual semiconductor structures are processed, and a baffle arrangement comprises baffles which divide process gas flowing through the gas delivery conduit into center, inner annular, and outer annular flow streams.
10
Patent
Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasma
Kenneth S. Collins,Ren-Guan Duan,Jennifer Y. Sun,Li Xu,Jie Yuan,エス コリンズ ケネス,ユアン ジエ,ワイ サン ジェニファー,スー リー,デュアン レングアン +9 more
- 07 Apr 2008
TL;DR: In this paper, the authors proposed a multi-phase ceramic which is multi-phased, typically including at least two phases or three phases, to provide a ceramic article resistant to erosion by a halogen-containing plasma used in semiconductor processing.
10
References
Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
- 19 Dec 1986
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
685
Patent
A programmable multizone gas injector for single-wafer semiconductor processing equipment
Mehrdad M. Moslehi,Cecil J. Davis,Robert T. Matthews +2 more
- 29 Dec 1992
TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.
363
Patent
Composite electrode for plasma processes
Raymond L. Degner,Eric Lenz +1 more
- 18 Sep 1990
TL;DR: An electrode assembly for a plasma reactor, such as a plasma etch or plasmaenhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof as mentioned in this paper.
261
Patent
Plasma reactor with programmable reactant gas distribution
Hongching Shan
- 07 Jun 1995
TL;DR: In this paper, a plasma reactor for processing a semiconductor wafer inside a vacuum chamber has an array of gas distribution orifices in said chamber facing respective underlying portions of a top surface of said wafer, a gas flow supply, apparatus for individually coupling gas to respective ones of said gas flow flow supply at respective individual gas flow rates, and apparatus for igniting a plasma inside the vacuum chamber from gases contained therein for processing said Wafer.
216
Patent
Chemical vapor deposition reactor and method of operation
Imad Mahawili
- 28 Jul 1989
TL;DR: In this article, a chemical vapor deposition (CVD) reactor and method is described, where a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate.
210
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