Patent
Gas injection slit nozzle for a plasma process reactor
Dan Maydan,Steve S. Y. Mak,Donald J. K. Olgado,Gerald Zheyao Yin,Timothy D. Driscoll,James S. Papanu,Avi Tepman +6 more
- 09 Jul 1996
276
TL;DR: In this paper, a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection device having a gas supply containing an etchant species in a gas, an opening in the chamber housing.
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Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
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Citations
Patent
Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside
Madhavi R. Chandrachood,Michael N. Grimbergen,Khiem K. Nguyen,Richard Lewington,Ibrahim M. Ibrahim,Sheeba J. Panayil,Ashok Kumar +6 more
- 30 Oct 2006
TL;DR: In this article, a plasminar etch method was proposed, which simultaneously illuminated an array of plural locations on front surface of the workpiece through the backside of workpiece with light of a wavelength range for which the work piece is transparent, while viewing light reflected from the array of plurality locations to the back side of the piece.
14
Patent
Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
Daniel J. Hoffman,Ezra Robert Gold +1 more
- 11 Dec 2006
TL;DR: In this article, a relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension.
14
Patent
Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
Rish Chhatre,David Schaefer +1 more
- 25 Oct 2011
TL;DR: An improved gas injection assembly for mounting in a central bore of a dielectric window of an inductively coupled plasma chamber includes a window having a central bearing and cylindrical recess configured to receive an annular insert having a bayonet opening as mentioned in this paper.
13
Patent
Etching apparatus and etching method
Kwang-Myung Lee,Ki-Young Yun,Il-kyoung Kim,Sung-Wook Park,Seung-Ki Chae,No-Hyun Huh,Jae Wook Kim,Jae-Hyuck An,Woo-Seok Kim,Myeong-Jin Kim,Kyoung-Ho Jang,Shinji Yanagisawa,Kengo Tsutsumi,Seiichi Takahashi +13 more
- 10 Jan 2005
TL;DR: In this paper, a vacuum processing apparatus with a first gas introduction section is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer.
13
Patent
Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
Madhavi R. Chandrachood,Michael N. Grimbergen,Khiem K. Nguyen,Richard Lewington,Ibrahim M. Ibrahim,Sheeba J. Panayil,Ajay Kumar +6 more
- 30 Oct 2006
TL;DR: In this article, a plasminar plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface.
12
References
Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
- 19 Dec 1986
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
685
Patent
A programmable multizone gas injector for single-wafer semiconductor processing equipment
Mehrdad M. Moslehi,Cecil J. Davis,Robert T. Matthews +2 more
- 29 Dec 1992
TL;DR: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas as mentioned in this paper.
363
Patent
Composite electrode for plasma processes
Raymond L. Degner,Eric Lenz +1 more
- 18 Sep 1990
TL;DR: An electrode assembly for a plasma reactor, such as a plasma etch or plasmaenhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof as mentioned in this paper.
261
Patent
Plasma reactor with programmable reactant gas distribution
Hongching Shan
- 07 Jun 1995
TL;DR: In this paper, a plasma reactor for processing a semiconductor wafer inside a vacuum chamber has an array of gas distribution orifices in said chamber facing respective underlying portions of a top surface of said wafer, a gas flow supply, apparatus for individually coupling gas to respective ones of said gas flow flow supply at respective individual gas flow rates, and apparatus for igniting a plasma inside the vacuum chamber from gases contained therein for processing said Wafer.
216
Patent
Chemical vapor deposition reactor and method of operation
Imad Mahawili
- 28 Jul 1989
TL;DR: In this article, a chemical vapor deposition (CVD) reactor and method is described, where a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate.
210
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