Gas delivery module

TL;DR: In this article, the authors present methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications, and demonstrate a method of forming a metal-containing layer on a substrate.

TL;DR: In this paper, a method for forming a thermally stable spacer layer is disclosed, which includes first disposing a substrate in an internal volume of a processing chamber, the substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen.

TL;DR: In this paper, a method for patterning a conductive layer on a substrate includes supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive sheet disposed on the substrate, lowing the chlorine contained gas in the first gas mixture to a second flow rate lower than the first flow-rate to continue etching the first conductivity layer, and increasing the chlorine containing gases in the second gas mixture with a third flow rate greater than the second flow-level to remove the firstconductive layer from the substrate.

TL;DR: In this paper, a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidisable silicon component and a non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasmaenhanced reaction is presented.

TL;DR: A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described in this article, where a metal atomic layer is oxidized to form a metal oxide layer.

TL;DR: In this article, the authors proposed a method of forming a silicon oxide layer on a substrate by providing a substrate and forming an oxide layer overlying at least a portion of the substrate including residual water, hydroxyl groups, and carbon species.

TL;DR: In this paper, a method of depositing a silicon and nitrogen containing film on a substrate was proposed, where the radical nitrogen and silicon-containing precursors react and deposit the silicon-and nitrogen-containing film on the substrate.