Journal Article10.1109/TED.2017.2657579
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
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TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
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Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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Citations
Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric
Xiaodong Zhang,Xing Wei,Peipei Zhang,Hui Zhang,Li Zhang,Xuguang Deng,Yaming Fan,Guohao Yu,Zhihua Dong,Houqiang Fu,Yong Cai,Kai-Mei C. Fu,Baoshun Zhang +12 more
TL;DR: In this paper , a SiNx/SiON composite gate dielectric was used to improve the performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.
Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems
Abdul Waheed,Saif ur Rehman,Faisal Alsaif,Shoaib Rauf,Ismail Hossain,Mukesh Pushkarna,Fsaha Mebrahtu Gebru +6 more
TL;DR: A novel hybrid multimodule DC–DC converter for electric vehicles combines IGBT and MESFET modules, leveraging their strengths for high efficiency and density, achieving 99.25% efficiency and 10.99 kW/L power density through fast-switching and DAB topology.
5
Threshold Voltage Behavior and Short-Circuit Capability of p-Gate GaN HEMTs Depending on Drain- and Gate-Voltage Stress
Thorsten Oeder,Martin Pfost +1 more
- 07 Nov 2022
TL;DR: In this paper , the impact and correlation of drain and gate-voltage stress on the threshold voltage of commercially available p-gate GaN HEMTs are investigated based on single-pulse measurements acquired with a custom pulse setup, thus the transient behavior can be determined and subsequently translated into dc characteristics.
4
A GaN and Si Hybrid Solution for 48V-12V Automotive DC-DC Application
Lei Kou,Juncheng Lu +1 more
- 11 Oct 2020
TL;DR: In this article, a high efficiency and low-cost 48V-12V buck converter with a GaN/Si hybrid solution for automotive applications is discussed, which has lower system losses versus the pure Si solution, and has similar efficiency but lower cost as compared to the pure GaN solution.
4
Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High VDS
TL;DR: In this paper , a time-resolved extraction method is developed to investigate the threshold voltage of a Schottky-type p-GaN gate high electron mobility transistor (HEMT) biased at high voltage.
4
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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
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Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
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GaN Transistors for Efficient Power Conversion
Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Stanley Glaser +4 more
- 15 Sep 2014
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
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GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
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