Journal Article10.1109/TED.2017.2657579
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
1.3K
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
read more
Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
TL;DR: An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN /GaN-sub and a flat electric field in the drift region and a high breakdown voltage are obtained.
Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion
Ruopu Zhu,Qi Zhou,Hong Tao,Yi Yang,Kai Hu,Dong Wei,Liyang Zhu,Yuanyuan Shi,Wanjun Chen,Bo Zhang +9 more
TL;DR: In this paper, a novel vertical normally-off GaN power transistor featuring a split gate with the intrinsic reverse conduction (RCVFET) and low gate charge is proposed, favoring the improved switching speed and lower switching power loss.
11
Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode
Xing Wei,Xiaodong Zhang,Xin Zhou,Yongjian Ma,Wenbo Tang,Tiwei Chen,Weining Liu,Wenxin Tang,Guohao Yu,Yaming Fan,Kai Fu,Yong Cai,Baoshun Zhang +12 more
TL;DR: In this paper, a p-GaN/AlGaN /GaN hybrid anode diode (HAD) temperature sensor was fabricated by using hydrogen plasma treatment, and the experimental results can be interpreted well by the two-dimensional variable range hopping model.
11
1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability
TL;DR: In this paper , a reverse p-n junction was used in the gate stack design of a GaN/GaN high-electron mobility transistor (PNJ-HEMT).
11
References
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
1.6K
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
1K
•Book
GaN Transistors for Efficient Power Conversion
Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Stanley Glaser +4 more
- 15 Sep 2014
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
385
GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
202
Related Papers (5)
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
Umesh K. Mishra,Shen Likun,T.E. Kazior,Yifeng Wu +3 more
- 16 Jan 2008