Journal Article10.1109/TED.2017.2657579
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
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TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
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Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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Citations
High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration
Gaofei Tang,Man-Ho Kwan,Ru-Yi Su,Fu-Wei Yao,Lin You-Ru,J. L. Yu,Thomas Yang,Chan-Hong Chern,Tom Tsai,H. C. Tuan,Alexander Kalnitsky,Kevin J. Chen +11 more
TL;DR: In this paper, the authors demonstrated the high-frequency performance of gate capacitors with a metal/AlGaN/GaN structure on an enhancement-mode (E-mode) GaN-on-Si power device platform.
35
A Normally- off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
TL;DR: In this article, a flip-chip copackaged SiC-JFET/GaN-HEMT hybrid power switch is demonstrated, which features a vertical SiC JFET and a lateral GaN HEMT.
35
Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs
TL;DR: In this paper, the low-temperature gate reliability of Schottky-type p-GaN gate AlGaN/GaN heterojunction field effect transistors under forward gate voltage stress is investigated.
35
Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes
Yuan Li,Wenliang Wang,Xiaochan Li,Liegen Huang,Zhiting Lin,Zheng Yulin,Xiaofeng Chen,Guoqiang Li +7 more
TL;DR: In this article, a step-graded AlGaN buffer layer was designed to grow GaN epitaxial films on Si substrates to solve the problem of high-density dislocations and cracks of GaN-based LEDs.
35
The Evolution of Manufacturing Technology for GaN Electronic Devices.
An Chen Liu,Po Tsung Tu,Po Tsung Tu,Catherine Langpoklakpam,Yu Wen Huang,Ya Ting Chang,An Jye Tzou,Lung Hsing Hsu,Lung Hsing Hsu,Chun Hsiung Lin,Hao-Chung Kuo,Edward Yi Chang +11 more
TL;DR: In this article, the authors review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology.
34
References
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
1K
•Book
GaN Transistors for Efficient Power Conversion
Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Stanley Glaser +4 more
- 15 Sep 2014
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
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GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
202
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