Journal Article10.1109/TED.2017.2657579
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
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TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
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Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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Citations
Recessed-gate AlGaN/GaN MIS-FETs with dual 2DEG channels
TL;DR: In this paper , a dual-channel epitaxy structure with a recessed MIS gate was used to construct an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT).
1
Au-based and Au-free ohmic contacts to AlGaN/GaN structures on silicon or Sapphire substrates
Wenmao Li,Jian Zhang,Robert Sokolovskij,Yumeng Zhu,Yongle Qi,Xinpeng Lin,Jingyi Wu,Lingli Jiang,Hongyu Yu +8 more
- 08 Mar 2018
TL;DR: In this article, the authors compared three metal stacks of Au-free ohmic contact and obtained the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively.
•Posted Content
Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
Wei-Chih Cheng,Minghao He,Siqi Lei,Liang Wang,Jingyi Wu,Fanming Zeng,Qiaoyu Hu,Feng Zhao,Mansun Chan,Guangrui,Xia,Hongyu Yu +11 more
TL;DR: In this paper, a dual-layer SiNx stressor was used for AlGaN/GaN HEMTs with a 1 V increase in the threshold voltage with comparable on-current and RF current gain.
Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs
TL;DR: In this paper , multiple time-dependent gate breakdown experiments are performed on p-GaN gate high-electron-mobility transistors (HEMTs) under constant gate voltage stress.
References
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
1.6K
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
1K
•Book
GaN Transistors for Efficient Power Conversion
Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Stanley Glaser +4 more
- 15 Sep 2014
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
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GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
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