Journal Article10.1109/TED.2017.2657579
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
1.3K
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
read more
Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process
Yi Cheng Chen,Shun-Wei Tang,Pin-Hau Lin,Zheng-Chen Chen,Ming-Hao Lu,Kuo-Hsing Kao,Tian-Li Wu +6 more
- 20 Jul 2020
TL;DR: In this paper, the authors observed the distinct V TH characteristics in the Au-free gate-first processing p-GaN/AIGaN/GaN HEMTs with two commonly used passivation layers, i.e., SiN and SiO 2.
1
Current transport mechanisms in Au-free metallizations for CMOS compatible GaN HEMT technology
Fabrizio Roccaforte
- 19 Jul 2019
TL;DR: In this article, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts.
1
Effects of Solution Height on the Growth of GaN Crystals in the Na-Flux Liquid-Phase Method
Gemeng Huang,Maorong Feng,Chen Yang,Ming Ma,Song Xia,Fan Song,Zhenrong Li +6 more
1
GaN Active Rectifier Diode
01 Jan 2022
TL;DR: In this article , a GaN active rectifier diode consisting of a 600 V power transistor, a control circuit with gate driver, and a supply generation, all monolithically realized in a GAN power integrated circuit (IC).
1
References
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
1.6K
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
1K
•Book
GaN Transistors for Efficient Power Conversion
Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Stanley Glaser +4 more
- 15 Sep 2014
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN on Si Technologies for Power Switching Devices
TL;DR: In this article, a gate injection transistor (GIT) is proposed to increase the drain current with low on-state resistance by conductivity modulation, which greatly helps in increasing the efficiency of power switching systems.
385
GaN on Si Substrate with AlGaN/AlN Intermediate Layer
TL;DR: In this article, a single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and the fullwidth at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec.
202
Related Papers (5)
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
Umesh K. Mishra,Shen Likun,T.E. Kazior,Yifeng Wu +3 more
- 16 Jan 2008