Journal Article10.1038/NATURE25768
GaN/NbN epitaxial semiconductor/superconductor heterostructures.
Rusen Yan,Guru Khalsa,Suresh Vishwanath,Yimo Han,John Wright,Sergei Rouvimov,D. Scott Katzer,Neeraj Nepal,Brian P. Downey,David A. Muller,Huili Grace Xing,David J. Meyer,Debdeep Jena +12 more
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TL;DR: The demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductor opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.
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Abstract: Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.
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Citations
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Koon Hoo Teo,Yuhao Zhang,Nadim Chowdhury,Shaloo Rakheja,Rui Ma,Qingyun Xie,Eiji Yagyu,Koji Yamanaka,Kexin Li,Tomas Palacios +9 more
TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.
192
Microwave-optical quantum frequency conversion
Xu Han,Wei Fu,Chang-Ling Zou,Liang Jiang,Hong X. Tang +4 more
- 20 Aug 2021
TL;DR: In this article, the authors summarize the progress, emphasizing integrated device approaches, and provide a perspective for device implementation that enables quantum state transfer and entanglement distribution across microwave and optical domains.
170
Hole mobility of strained GaN from first principles
TL;DR: In this article, the authors performed predictive $a\phantom{\rule{0}{0ex}}b \phantom{0.333em}{ 0ex}}i\phantastic{0,0ex}n\phantic{0,0,1}n/n\phantastic{1,0,2}n/$ calculations of the phonon-limited mobility of GaN and found that hole mobilities as high as 120 cm{}^{2}$/Vs at room temperature could potentially be achieved by reversing the sign of the crystal
107
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics.
Vikrant J. Gokhale,Brian P. Downey,D. Scott Katzer,Neeraj Nepal,Andrew C. Lang,Rhonda M. Stroud,David J. Meyer +6 more
TL;DR: In this article, an epitaxial high-overtone bulk acoustic wave resonator (HBAR) was proposed to achieve a power injection efficiency of >99% from transducer to phonon cavity.
A transverse tunnelling field-effect transistor made from a van der Waals heterostructure
Xiong Xiong,Mingqiang Huang,Mingqiang Huang,Ben Hu,Xuefei Li,Fei Liu,Sichao Li,Mengchuan Tian,Tiaoyang Li,Jian Song,Yanqing Wu,Yanqing Wu +11 more
- 01 Feb 2020
TL;DR: In this paper, a tunnelling field-effect transistor made from a black phosphorus/Al2O3/black phosphorus van der Waals heterostructure is presented, which exhibits abrupt switching with a body factor that is one-tenth of the Boltzmann limit for conventional transistors across a wide temperature range.
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TL;DR: In this paper, the authors show that vertical GaN p-n diodes with a mesa diameter of 107μm can achieve an avalanche breakdown voltage (BV) of > 1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality Factor of 1.1, which is consistently achieved over a temperature range of 300-400
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TL;DR: Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the spin-orbit interactions as mentioned in this paper.
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•Journal Article
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
TL;DR: It is shown that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state.