GaN‐Based Materials
Ferdinand Scholz,Michal Bockowski,Michal Bockowski,Ewa Grzanka +3 more
- 03 Aug 2020
- pp 41-98
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About: The article was published on 03 Aug 2020.
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Citations
•Journal Article
Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
Hiroyasu Ishikawa,Naoyuki Nakada,Masayoshi Mori,Guan-Yuan Zhao,Takashi Egawa,Takashi Jimbo,Masayoshi Umeno +6 more
TL;DR: In this paper, the growth of GaN-based light-emitting-diode (LED) structures with GaInN/GaN multi-quantum wells (MQWs) has been explored by metalorganic chemical vapor deposition.
10
Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential
Thomas Wostatek,V. Y. M. Rajesh Chirala,Nathan Stoddard,Ege N. Civas,Siddha Pimputkar,Saskia Schimmel +5 more
TL;DR: Ammonothermal crystal growth of functional nitrides for semiconductor devices: Review of the state-of-the-art and potential for novel materials. Single crystal growth of nitrides beyond GaN, including ternary and higher-order nitrides, is reviewed. The impact of point defects and recent developments in autoclave technology are discussed.
Influencing the Surface Quality of Free-Standing Wurtzite Gallium Nitride in Ultra-High Vacuum: Stoichiometry Control by Ammonia and Bromine Adsorption
M. Rostami,Biao Yang,Felix Haag,Francesco Allegretti,Lifeng Chi,M. Stutzmann,Johannes V. Barth +6 more
- 01 Jan 2024
Influencing the surface quality of free-standing wurtzite gallium nitride in ultra-high vacuum: Stoichiometry control by ammonia and bromine adsorption
Mohammadreza Rostami,Biao Yang,Felix Haag,Francesco Allegretti,Lifeng Chi,Martin Stutzmann,Johannes V Barth +6 more
References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
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The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
TL;DR: In this paper, high efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layers.
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
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