Open AccessJournal Article
Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
TL;DR: In this paper, a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures was reported.
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Abstract: We report a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures. n-GaN/InGaN/p-GaN CSS nanowire structures were grown by metal-organic chemical vapor deposition. Electron microscopy images reveal that the CSS nanowires are defect-free single crystalline structures, while energy-dispersive X-ray linescan profile studies confirm that shell thickness and composition can be well controlled during synthesis. Photoluminescence data further show that the optical properties are controlled by the CSS structure with strong emission from the InGaN shell centered at 448 nm. Importantly, electrical devices made by simultaneously contacting the n-type core and outer p-type shell of the CSS nanowires demonstrate that in forward bias these individual nanowires behave as light-emitting diodes (LEDs) with bright blue emission from the InGaN shell. The ability to rationally synthesize galliu...
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Citations
Ti/Al ohmic contacts to n-type GaN nanowires
TL;DR: In this paper, the specific contact resistance of n-type GaN nanowires with triangular cross-sections was investigated using the commonly used transmission line model adapted to the particular nanowire geometry.
Gallium Nitride—Emerging Future Technology for Low-Power Nanoscale IC Design
Sahil Sankhyan,Tarun Chaudhary,Gargi Khanna,Rajeevan Chandel +3 more
- 01 Jan 2020
TL;DR: In this paper, the authors focus on the basics of advanced materials beyond Si and germanium which can be used for the fabrication of various electronic devices such as transistors, gates, oscillators, and amplifiers, addressing the advantages and disadvantages associated with the usage of these materials for modern electronic devices and low-power VLSI circuits.
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Growth temperature influence on the GaN nanowires grown by MOVPE technique
L. Dimitrocenko,K. Kundzins,Anatoly Mishnev,I. Tale,A Voitkans,P. Kulis +5 more
- 23 Jun 2011
TL;DR: In this article, GaN nanowires were successfully grown by vapor-liquid-solid (VLS) growth mechanism on GaN template using metal-organic vapor phase epitaxy (MOVPE) with diameters ranging from 20 to 200 nm and length up to few microns.
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High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy
A. P. Vajpeyi,G. Tsiakatouras,A. Adikimenakis,Katerina Tsagaraki,M. Androulidaki,Alexandros Georgakilas +5 more
TL;DR: The spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated in this paper, where the average diameter of the GaN was in the range of 70-100nm and an average height of 600nm.
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