Forming method for fine pattern

TL;DR: In this article, a mask pattern is transferred in a reduced size on a Si substrate through a convex mirror 21 and a concave mirror 22, and the light passing through the mask 12 can excite inner shell electrons of Al(CH3)2H which is the source gas of Al to be used for an inorg.

Abstract: PURPOSE:To directly pattern in the production process of LSIs by transferring a mask pattern in an equal or reduced size and selectively growing an inorg. resist on the pattern. CONSTITUTION:The pattern of a mask 12 is transferred in a reduced size on a Si substrate 1 through a convex mirror 21 and a concave mirror 22. The light passing through the mask 12 can excite inner-shell electrons of Al(CH3)2H which is the source gas of Al to be used for an inorg. resist and can form an AlC film 15 on the substrate 11. Therefore, the AlC film 15 is formed on the pattern formed by transferring the pattern of the mask 12 in a reduced size. Then, by heating the substrate, thermal CVD of Al is produced and Al grows only in the area where the AlC film 15 is not formed. Thus, the Al film as an inorg. resist grows on the pattern formed by transferring of the pattern of the mask 12 in a reduced size. Then, this Al film is used as a mask 12 and the substrate 11 is etched to obtain the mask pattern in a reduced size on the substrate 11.