First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
Xinyuan Zhao,David Vanderbilt +1 more
TL;DR: In this paper, the dielectric susceptibility tensors for the three low-pressure phases of the zone-center phonon modes were investigated with both local density approximation (LDA) and generalized gradient approximation (GDA).
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Abstract: Crystalline structures, zone-center phonon modes, and the related dielectric response of the three low-pressure phases of ${\mathrm{HfO}}_{2}$ have been investigated in density-functional theory using ultrasoft pseudopotentials and a plane-wave basis. The structures of low-pressure ${\mathrm{HfO}}_{2}$ polymorphs are carefully studied with both the local-density approximation (LDA) and the generalized gradient approximation. The fully relaxed structures obtained with either exchange-correlation scheme agree reasonably well with experiment, although LDA yields better overall agreement. After calculating the Born effective charge tensors and the force-constant matrices by finite-difference methods, the lattice dielectric susceptibility tensors for the three ${\mathrm{HfO}}_{2}$ phases are computed by decomposing the tensors into the contributions from individual infrared-active phonon modes.
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Citations
Structural Metastability and Size Scalability of Phase-Controlled Hfo2 Formed Through Cap-Pda
S. Migita,Y. Watanabe,H. Ota,T. Nabatame,A. Toriumi +4 more
TL;DR: Cubic phase HfO2 films with high dielectric constant (up to 50) are prepared through Cap-PDA process, with Si being a key material, and exhibit metastability and scalability advantages in sub-1 nm MOSCAPs and sub-100 nm MOSFETs.
Praseodymium Content Influence on the Resistive Switching Effect of HfO2 -Based RRAM Devices
Guillermo Vinuesa,H. García,O. G. Ossorio,E. García-Ochoa,Lauri Aarik,K. Kukli,Helena Castán,S. Dueñas +7 more
- 06 Jun 2023
TL;DR: Praseodymium doping enhances the resistive switching performance of HfO2 -based RRAM devices, reducing switching voltages and improving endurance characteristics.
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition
Fei Huang,Xing Chen,Xiao Liang,Jun Qin,Yan Zhang,Taixing Huang,Zhuo Wang,Bo Peng,Peiheng Zhou,Haipeng Lu,Li Zhang,Longjiang Deng,Ming Liu,Qi Liu,He Tian,Lei Bi +15 more
TL;DR: A systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition and domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism.
Real-time atomistic observation of structural phase transformations in individual hafnia nanorods
Bethany M. Hudak,Sean W. Depner,Gregory R. Waetzig,Anjana Talapatra,Raymundo Arroyave,Sarbajit Banerjee,Beth S. Guiton,Beth S. Guiton +7 more
TL;DR: In situ heating in a scanning transmission electron microscope is used to observe the transformation of an HfO2 nanorod from monoclinic to tetragonal, with a transformation temperature suppressed by over 1000°C from bulk.
First-principles calculations of structural and electronic properties of monoclinic hafnia surfaces
TL;DR: In this paper, a systematic theoretical study of the surfaces of monoclinic hafnia was carried out using plane waves and density functional theory based on the generalized gradient approximation.
References
Generalized Gradient Approximation Made Simple
TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
Soft self-consistent pseudopotentials in a generalized eigenvalue formalism.
TL;DR: Novel features are that the pseudopotential itself becomes charge-state dependent, the usual norm-conservation constraint does not apply, and a generalized eigenproblem is introduced.
22.4K
Ground state of the electron gas by a stochastic method
David M. Ceperley,Berni J. Alder +1 more
TL;DR: An exact stochastic simulation of the Schroedinger equation for charged Bosons and Fermions was used to calculate the correlation energies, to locate the transitions to their respective crystal phases at zero temperature within 10%, and to establish the stability at intermediate densities of a ferromagnetic fluid of electrons.
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Theory of polarization of crystalline solids
TL;DR: It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.
4.2K