First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ alloys

TL;DR: The solid-solution limit of β-(AlxGa1-x)2O single crystals grown by Czochralski method is achieved at [Al] = 40 mol%, resulting in the formula of β-(Al0.4Ga0.6)2O3. Single crystalline and monoclinic phase is preserved up to this limit.

TL;DR: Electrical conductivity, luminescence, and deep acceptor levels in β-Ga2O3-In2O3 polycrystalline solid solution doped with Zr4+ or Ca2+ ions are studied. Samples exhibit high luminescence and low electrical conductivity. The luminescence arises from the radiative recombination of charge carriers through donor–acceptor pairs and self-localized holes.

TL;DR: In this paper, the authors employed first-principles calculations to determine the brittle fracture toughness of (AlxGa1−x)2O3 epitaxial films for three growth orientations of the monoclinic structure: [100], [010], and [001].

TL;DR: In this article, a low free carrier concentration of 153 cm2/V s was reported for MOCVD-grown β-Ga2O3 with excellent electron mobility, which was attributed to the compensation of Si at the film/substrate interface by N, which acts as a deep acceptor.

TL;DR: In this article, the authors evaluated the type-I band alignment at an α-Ga2O3/α-(Al x Ga1− x ) 2O3 heterointerface, with different Al compositions (x), grown on a c-plane sapphire substrate was evaluated by X-ray photoelectron spectroscopy.

TL;DR: In this article, the thermal expansion of κ -Al 2 O 3 has been characterised using high temperature X-ray diffraction of the powder obtained from crushed chemical vapour deposited κ-Al 2O 3 coatings.