Journal Article10.1016/J.SEMCDB.2009.01.014
Field-effect devices for detecting cellular signals.
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TL;DR: This review article summarises recent advances and trends in research and development of cell/transistor hybrids (cell-based field-effect transistors) as well as light-addressable potentiometric sensors.
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About: This article is published in Seminars in Cell & Developmental Biology. The article was published on 01 Feb 2009.
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Citations
Optimization of Cell-Based Multi-Chamber LAPS Measurements Utilizing FPGA-Controlled Laser-Diode Modules
Shahriar Dantism,Shahriar Dantism,Désirée Röhlen,Torsten Wagner,Patrick Wagner,Michael J. Schöning +5 more
Abstract: A light‐addressable potentiometric sensor (LAPS) is a field‐effect‐based potentiometric device, which detects concentration changes of an analyte solution on the sensor surface in a spatially resolved way. It uses a light source to generate electron–hole pairs inside the semiconductor, which are separated in the depletion region due to an applied bias voltage across the sensor structure and hence, a surface‐potential‐dependent photocurrent can be read out. However, depending on the beam angle of the light source, scattering effects can occur, which influence the recorded signal in LAPS‐based differential measurements. To solve this problem, a novel illumination unit based on a field programmable gate array (FPGA) consisting of 16 small‐sized tunable infrared laser‐diode modules (LDMs) is developed. Due to the improved focus of the LDMs with a beam angle of only 2 mrad, undesirable scattering effects are minimized. Escherichia coli (E. coli) K12 bacteria are used as a test microorganism to study the extracellular acidification on the sensor surface. Furthermore, a salt bridge chamber is built up and integrated with the LAPS system enabling multi‐chamber differential measurements with a single Ag/AgCl reference electrode.
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Application of ion-senstitive field effect transistors for measuring glial cell K+ transport
Yihao Zhu,Goutam Koley,Kenneth B. Walsh,Ashley Galloway,Pavel I. Ortinski +4 more
- 01 Oct 2016
TL;DR: The fabrication and utilization of graphene-based, ion-sensitive field effect transistors (ISFETs) for measuring K+ efflux from immortalized and primary brain glial cells and will be useful for future multi-array, cell-based screening and toxicological studies of primary cell cultures.
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Biopolymer Composites in Field-Effect Transistors
TL;DR: The use of biopolymers in field effect transistors has attracted interest in the areas of physics, chemistry, materials, and microelectronics in the past few years due to numerous potential applications as discussed by the authors.
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Nanoplate field-effect capacitive (bio-)chemical sensor array based on SOI structure
Maryam H. Abouzar,Sven Ingebrandt,Arshak Poghossian,Y. Zhang,Xuan Thang Vu,Werner Moritz,Michael J. Schöning +6 more
TL;DR: An array of individually addressable nanoplate field effect capacitive (bio-) sensors based on an SOI (silicon-on-insulator) structure has been developed for multi-parameter detection as mentioned in this paper.
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Reaction–diffusion modelling for microphysiometry on cellular specimens
D. Grundl,Xiaorui Zhang,Safa Messaoud,Cornelia Pfister,Franz Demmel,Mario S. Mommer,Bernhard Wolf,Martin Brischwein +7 more
TL;DR: The model is applicable to any setting of (bio-) sensors involving reaction and diffusion of dissolved gases and particularly H+ ions in buffered solutions and reveals significant deviations of measured pH and O2, and values of these parameters actually occurring at different sites of the cell culture volume.
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Recent advances in biologically sensitive field-effect transistors (BioFETs)
TL;DR: This paper gives a review of recent and significant advances in the research and development of BioFETs, focusing mainly upon developments occurring during the last six years (from 1995 to the end of 2001).
A neuron-silicon junction: a Retzius cell of the leech on an insulated-gate field-effect transistor.
TL;DR: An identified neuron of the leech, a Retzius cell, has been attached to the open gate of a p-channel field-effect transistor, and weak signals that resemble the first derivative of the action potential were observed.
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