Journal Article10.1016/J.MEE.2009.01.073
FIB sputtering optimization using Ion Reverse Software
TL;DR: In this paper, a quantitative description of focused ion beam (FIB) milling can be provided by means of an isotropic local etching model, which does not account for re-deposition.
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About: This article is published in Microelectronic Engineering. The article was published on 01 Apr 2009. The article focuses on the topics: Focused ion beam & Sputtering.
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Citations
Roadmap for focused ion beam technologies
Katja Höflich,G. Hobler,Frances I. Allen,Tom Wirtz,Gemma Rius,Lisa McElwee‐White,Arkady V. Krasheninnikov,Matthias Schmidt,Ivo Utke,Nico Klingner,Markus Osenberg,Rosa Córdoba,Flyura Djurabekova,Ingo Manke,Philip J. W. Moll,Mariachiara Manoccio,J. M. De Teresa,L. Bischoff,Johann Michler,Olivier De Castro,Anne Delobbe,Peter Dunne,Oleksandr V. Dobrovolskiy,Natalie Frese,Armin Gölzhäuser,Paul Mazarov,D. Koelle,W. Möller,Francesc Pérez‐Murano,Patrick Philipp,Florian Vollnhals,Gregor Hlawacek +31 more
TL;DR: The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials at the nanoscale. FIB is used in a wide range of research fields and has a broad range of applications.
32
Technology maturity assessment of micro and nano manufacturing processes and process chains
Pierre Vella,Pierre Vella,Stefan Simeonov Dimov,Roussi Minev,Emmanuel Bruno Jean Paul Brousseau +4 more
- 01 Jun 2018
TL;DR: In this article, a methodology is proposed for assessing the maturity of manufacturing technologies based on modelling the capability of the individual processes and technology interfaces between them, inspired by a capability maturity model which has been applied successfully in the field of software engineering.
A new process chain for producing bulk metallic glass replication masters with micro- and nano-scale features
Pierre Vella,Pierre Vella,Stefan Simeonov Dimov,Emmanuel Bruno Jean Paul Brousseau,Ben Whiteside +4 more
TL;DR: In this article, a process chain for serial production of polymer-based devices incorporating both micro- and nano-scale features is proposed, which is enabled by the use of Zr-based bulk metallic glasses (BMG) to achieve the necessary level of compatibility and complementarity between its component technologies.
AFM-Based nanofabrication and quality inspection of three-dimensional nanotemplates for soft lithography
TL;DR: In this paper, the authors demonstrated the effectiveness of ultrasonic vibration assisted AFM-based nanomachining in fabricating 3D master nanotemplates for 3D soft lithography.
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Design and validation of a novel master-making process chain for organic and large area electronics on flexible substrates
V. Velkova,G. Lalev,Hassan Hirshy,Steffen Scholz,Johanna Hiitola-Keinänen,Herbert Gold,Anja Haase,Jukka Hast,Barbara Stadlober,Stefan Simeonov Dimov +9 more
TL;DR: In this article, the authors presented a process chain for fabrication of replication masters for serial manufacture, which relies on using different technologies for micro-structuring and sub-micron and nano patterning that are applied to the fabrication of Ni shims incorporating different length scale features.
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References
Simulation of ion beam direct structuring for 3D nanoimprint template fabrication
Elmar Platzgummer,A. Biedermann,H. Langfischer,Stefan Eder-Kapl,M. Kuemmel,S. Cernusca,Hans Loeschner,C. Lehrer,Lothar Frey,Alois Lugstein,Emmerich Bertagnolli +10 more
TL;DR: Ionshaper(TM) as discussed by the authors is a software tool that allows calibrated high precision simulation of ion beam processing, including first and second-order sputtering and re-deposition in 2D.
46
Data preparation for focused ion beam machining of complex three-dimensional structures:
G. Lalev,Stefan Simeonov Dimov,Jeff Kettle,F.C.M.J.M. van Delft,Roussi Minev +4 more
- 01 Jan 2008
TL;DR: In this paper, a novel and efficient data preparation approach is proposed for layer-based focused ion beam (FIB) processing using CAD/CAM data and an experimental study is conducted.
26
Accuracy of proximity correction in electron lithography after development
TL;DR: In this paper, Aristov and Zaitsev calculated the proximity correction for backscattered electrons by the method of simple compensation and simulated the proximity effect after development with the before corrected dose distribution, but now considering all parameters: α, β, η, thickness H and contrast γ of positive resist.
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