Journal Article10.1007/S13391-016-6144-8
Fabrication and shear strength analysis of Sn-3.5Ag/Cu-filled TSV for 3D microelectronic packaging
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TL;DR: In this article, lead free Sn-3.5Ag solder bumps have been deposited on Cu-filled through-silicon via (TSV) by electroplating method, and the results indicate the formation of Cu6Sn5 and Ag3Sn intermetallic compounds (IMCs) at the joint interface.
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Abstract: In this study, lead free Sn-3.5Ag solder bumps have been deposited on Cu-filled through-silicon via (TSV) by electroplating method. The solder bumps are plated using an acidic solution composed of SnSO4, H2SO4, Ag2SO4, thiourea and an additive. The current density is varied from −30 to −60 mA/cm2 to obtain the eutectic Sn-3.5Ag solder. The copper is electroplated in TSV using an acidic solution of CuSO4·5H2O, H2SO4, HCl, and an inhibitor. The bottom-up Cu-filling in TSV is achieved by a 3-step pulse periodic reverse (PPR) electroplating. It has been observed that the eutectic Sn-3.5Ag solder is achieved at a current density of −55 mA/cm2. The solder bumps are further reflowed onto TSV at 260 °C for 20 seconds, and shear strength of the formed Sn-3.5Ag/Cu-filled TSV joint is investigated. The results indicate the formation of Cu6Sn5 and Ag3Sn intermetallic compounds (IMCs) at the joint interface. It is found that with an increase of shear speed from 0.5-10 mm/s, the shear stress initially increases to a maximum, and then decreases beyond shear speed of 10 mm/s through 500 mm/s. It is shown that the ductile fracture mode gradually decreases beyond shear speed of 10 mm/s and disappears completely at 500 mm/s.
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Citations
Effect of silicon anisotropy on interfacial fracture for three dimensional through-silicon-via (TSV) under thermal loading
TL;DR: In this paper, the effect of silicon anisotropy on the crack driving force, e.g., energy release rate (ERR), is discussed thoroughly by considering different crack depths, aspect ratios as well as heating and cooling effects in typical TSV under three dimensional (3D) conditions.
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Effect of nickel (Ni) on the growth rate of Cu6Sn5 intermetallic compounds between Sn–Cu–Bi solder and Cu substrate
TL;DR: In this paper, the effect of Ni addition on the growth behavior of intermetallic compounds (IMCs) between Sn-0.7Cu-10Bi-xNi (x = 0, 0.05, 0., 0.15 and 0.20, in wt%) solder and Cu substrate during the soldering process was studied.
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Ni Barrier Symmetry Effect on Electromigration Failure Mechanism of Cu/Sn–Ag Microbump
TL;DR: In this paper, the Ni barrier symmetry effect on the electromigration failure mechanism of the Cu/Sn-Ag microbump was systematically investigated by studying the intermetallic compound (IMC) growth characteristics at 150°C with a current density of 1.5
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Thermomechanical reliability of a Cu/Sn-3.5Ag solder joint with a Ni insertion layer in flip chip bonding for 3D interconnection
TL;DR: In this article, a Ni layer was deposited between the Cu/Ni/Sn-3.5Ag solder bumps of upper and lower chips, and TCB process tests were carried out at different bonding temperatures, forces and times.
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References
Effects of the intermetallic compound microstructure on the tensile behavior of Sn3.0Ag0.5Cu/Cu solder joint under various strain rates
TL;DR: The results indicate that both the thickness and roughness of the IMC layer have influence on the strength and failure mode of the solder joint.
105
A Study on the Effect of Pulse Electrodeposition Parameters on the Morphology of Pure Tin Coatings
TL;DR: In this article, the effects of various electroplating parameters such as current density, additive concentration, duty cycle, frequency, pH, and stirring rate (bath rotation) on the evolution of surface morphology of the coatings have been studied.
Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu
Chukwudi Okoro,Chukwudi Okoro,Riet Labie,Kris Vanstreels,Alexis Franquet,Mario Gonzalez,Bart Vandevelde,Eric Beyne,Dirk Vandepitte,Bert Verlinden +9 more
TL;DR: In this paper, the role of electrodeposition chemistry on thermo-mechanical behavior of different Cu-films is examined, and it is found that the level of impurity in the injected impurity has a significant impact on their micro-structural and thermodynamic behavior.
85
Interfacial Reaction of Sn-Ag-Cu Lead-Free Solder Alloy on Cu: A Review
Liu Mei Lee,Ahmad Azmin Mohamad +1 more
TL;DR: In this paper, the function and importance of Sn-Ag-Cu solder alloys in electronics industry and the interfacial reaction of SnAg-cu/Cu solder joint at various solder forms and solder reflow conditions are discussed.
Ultra-high-density interconnection technology of three-dimensional packaging
Kenji Takahashi,Mitsuo Umemoto,Naotaka Tanaka,Kazumasa Tanida,Yoshihiko Nemoto,Yoshihiro Tomita,Masamoto Tago,Manabu Bonkohara +7 more
TL;DR: The study of 20-μm-pitch interconnection technology of three-dimensional (3D) packaging focused on reliability, ultrasonic flip–chip bonding and Cu bump bonding is described, and it is succeeded in building a stacked chip sample with 20- μm- pitch interconnections.
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