Journal Article10.1007/BF02457248
Exciton recombination mechanism and binding energies in MOCVD-grown Zn1-x Cd x Se-ZnSe single quantum wells
F. Liaci,L. Aigouy,Pierre Bigenwald,Bernard Gil,N. Briot,Thierry Cloitre,Olivier Briot,Roger Aulombard +7 more
TL;DR: In this article, the optical properties of ZnCdSe−ZnSe quantum structures elaborated by metalorganic chemical vapour deposition (MOCVD) were investigated by means of photoluminescence and photoreflectance.
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Abstract: We report here on the study of the optical properties of ZnCdSe−ZnSe quantum structures elaborated by metalorganic chemical vapour deposition (MOCVD). The band structure is experimentally investigated by means of photoluminescence and photoreflectance. We have computed the exciton binding energies for heavy- and light-hole excitons in the context of a self-consistent two-parameter trial function. As a complement, we study the temperature dependence of the photoluminescence intensity under both direct and indirect photoexcitation in graded-index separate confinement heterostructures based on these materials.
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References
Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double-quantum-well heterostructures.
TL;DR: Par simulation numerique on determine les diffusivites ambipolaires ainsi que les vitesses de recombinaison de surface and d'interface dans ces heterostructures dans les barrieres Al 0,5 Ga0,5 As.
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Variational treatment of the exciton binding energy problem in low-dimensional systems with one marginal potential
Bernard Gil,Pierre Bigenwald +1 more
TL;DR: In this paper, the authors adapted the formalism adapted to calculate the exciton binding energy in type I and type II quantum wells with one marginal potential, using a two parameter trial function and the correction of marginal potential by the self-induced exciton polarisation field.
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Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells
TL;DR: In this paper, it was shown that photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10−100 K, depending on the well width, and thermal activation of electronhole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs.