Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application
Joachim John,Victor Prajapati,Bart Vermang,Anne Lorenz,Christophe Allebe,Aude Rothschild,Loic Tous,A. Uruena,Kris Baert,J. Poortmans +9 more
- 01 Jan 2012
- Vol. 3, Iss: 3, pp 35005
TL;DR: In this article, the authors proposed a successive efficiency improving process development starting from the existing full aluminum back-side field (Al BSF) cell concept, which includes optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting.
read more
Abstract: Bulk crystalline Silicon solar cells are covering more than 85% of the world’s roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90’s and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
The effect of surface morphology on the performance of 21% n-type PERT solar cells with an epitaxial rear emitter
TL;DR: In this paper, the effect of rear surface morphology on the performance of n-type rear-junction Passivated Emitter Rear Totally Diffused (PERT) solar cells with epitaxial emitter was evaluated by means of simulations and measurements.
5
Deposition behaviour of metal impurities in acidic cleaning solutions and their impact on effective minority carrier lifetime in n-type silicon solar cells
Joachim John,Ali Hajjiah,Michael Haslinger,M. Soha,A. Uruena,Emanuele Cornagliotti,Loic Tous,Paul Mertens,Jef Poortmans +8 more
TL;DR: In this paper, the impact of metal impurities on the effective minority carrier lifetime of crystalline silicon solar cells was investigated using an adsorption isotherm theory, and the authors derived an exchange volume that provides the minimum amount on wet chemical cleaning solution that is required to clean a silicon surface from a given high metal impurity level to a specified low metal impurate level.
4
Cell interconnection without glueing or soldering for crystalline Si photovoltaic modules
Johann Summhammer,Zahra Halavani +1 more
- 01 May 2016
TL;DR: In this paper, the long term stability of different contact materials and contact cross sections applied in eight modules of the 240 W class monitored for up to 24 months of outdoor operation and in a variety of small 5-cell modules exposed to rapid ageing tests with up to 1000 thermal cycles.
Size Dependent Gold Assisted ZnO Growth on Si Surface by Continuous Spray Pyrolysis Reactor for Light Suppression
TL;DR: In this paper, Colloidal Au particles of sizes 15 and 40 nm are spray deposited on polished Si surface and then the deposition of ZnO nanostructure layer using Continuous Spray Pyrolysis reactor is performed.
2
Oxide passivated low reflection nano-structured solar cell
Cheow Siu Leong,Kamaruzzaman Sopian,Saleem H. Zaidi +2 more
- 16 Jun 2013
TL;DR: In this article, surface reflection measurements from these surfaces have been carried out was comparable or 1% lower than SiN-coated surfaces and eliminating the need for deposition of high index SiN films.
1
References
Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data
Ronald A. Sinton,Andres Cuevas +1 more
TL;DR: In this paper, a simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented, using a contactless instrument.
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli,Annelies Delabie,Petko Vitanov,Z. Alexieva,Harold Dekkers,S. De Wolf,Guy Beaucarne +6 more
TL;DR: In this paper, surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2 O 3 layers on p-type CZ silicon wafers.
477
Material considerations for terawatt level deployment of photovoltaics
Andrea Feltrin,Alex Freundlich +1 more
TL;DR: In this article, several mature photovoltaic technologies, ranging from silicon to thin films, and solar concentrator systems are analyzed, and the estimates of the energy production limits are established for each technology, based on available global material reserves.
341
Control of metal impurities in "dirty" multicrystalline silicon for solar cells
Andrei A. Istratov,Andrei A. Istratov,Tonio Buonassisi,Tonio Buonassisi,Matthew D. Pickett,Matthew D. Pickett,M. Heuer,M. Heuer,Eicke R. Weber,Eicke R. Weber +9 more
TL;DR: In this paper, the defect engineering of metal impurity clusters in multicrystalline Si has been studied and it is shown that cells with the same total impurity content can have widely different minority carrier diffusion lengths based on the distribution of the metals, i.e., whether they are dispersed throughout the material or concentrated in a few, large clusters.
155
19.4%-efficient large-area fully screen-printed silicon solar cells
Sebastian Gatz,Helge Hannebauer,Rene Hesse,Florian Werner,Arne Schmidt,Thorsten Dullweber,Jan Schmidt,Karsten Bothe,Rolf Brendel +8 more
TL;DR: In this article, a large-area solar cell with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm2 p-type 2-3 Ω cm boron-doped Czochralski silicon wafers is presented.
122
Related Papers (5)
Ingmar Höger,Martin Schaper,Ansgar Mette,Benjamin G. Lee,Fabian Fertig,Ronny Lantzsch,Stefan Peters,Andreas Eidner,Klaus Duncker,Matthias Bartzsch,Matthias Junghänel,Enrico Jarzembowski,Maximilian Kauert,Björn Faulwetter-Quandt,Steffen Geißler,Stefan Hörnlein,Anika Weihrauch,Florian Stenzel,Andreas Hubert,Tomasz Rudolph,Axel Schwabedissen,Jörg Müller +21 more
- 10 Aug 2018