Patent
Etching composition and etching method
Hara Yasushi,Shimono Tetsusuu,Takahashi Fumiharu,哲数 下野,史治 高橋 +4 more
- 25 Jul 2006
34
TL;DR: In this article, the etching selection ratio of silicon nitride to silicon oxide is not reduced even at a high temperature for an etching composition of silicon polysilicon nitride.
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Abstract: PROBLEM TO BE SOLVED: To provide an etching composition of phosphoric acid to be used stably for a long time with which an etching selection ratio of silicon nitride to silicon oxide is not reduced even at a high temperature for an etching composition of silicon nitride SOLUTION: Regarding the etching composition of silicon nitride containing phosphoric acid and hexafluorosilicate or the etching composition containing phosphoric acid, ammonia, hexafluorosilicic acid or its salt, when it is used at the high temperature; the etching selection ratio of silicon nitride to silicon oxide is maintained stably for a long time The phosphoric acid in 70-99 wt% and the hexafluorosilicate in 001-05 wt% are preferable, and hexafluorosilicic acid hydrogen ammonium and/or hexafluorosilicic ammonium is preferable for hexafluorosilicate Furthermore, any one or more selected from the group of nitric acid or ammonium nitrate, molybdate, molybdic acid, tungstate and tungstic acid may also be contained further COPYRIGHT: (C)2008,JPO&INPIT
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References
Patent
Silicon nitride-silicon oxide etchant
Anthony S. Squillace,Albert E Martin,Jerald J Rudmann +2 more
- 19 Jul 1971
TL;DR: In this article, a chemical to etchant and a process for chemically etching silicon nitride-silicon oxide composite structure which may be used, for example in microelectronic devices.
33
Patent
Composition for etching
Hara Yasushi,Takahashi Fumiharu,Masami Zenitani,まさみ 銭谷,史治 高橋 +4 more
- 20 Jul 2010
TL;DR: In this article, a metal-stacked film including an aluminum metal film or an aluminum alloy film and a molybdenum metal film was collectively etched using a composition for etching.
18
Patent
Method of etching nitridation silicon
Deibuitsudo Hawaado Zuigaa
- 08 Mar 1996
TL;DR: In this article, the authors provide the method of etching silicon nitride provided with higher initial etching having selectivity, where the silicon may be added in the form of soluble silicon compounds such as hexafluorosilicic acid and ammonium fluorosilicate.
8
Patent
Etching of silicon nitride and etchant therefor
Rangarajan Jagannathan,Karen P. Madden,Kenneth J. McCullough,Harald F. Okorn-Schmidt,Keith R. Pope,David L. Rath,カレン・ピー・マッデン,キース・アール・ポープ,ケネス・ジェイ・マッカロー,デビッド・エル・ラス,ハラルド・エフ・オコーンシュミット,ランガラジャン・ジャガンナサン +11 more
- 13 Aug 1998
TL;DR: In this paper, the authors proposed a method of etching silicon nitride with an etching rate which is at least as fast as that for silicon dioxide, by contacting a target material containing silicon oxide and silicon dioxide to a composite etchant which is composed of a fluorine-containing compound, an organic solvent, and water of a specified molar concentration.
7
Patent
Etchant for silicon nitride and borosilicate glasses and method of using the etchant
Henry Wayne Justice
- 14 May 1975
TL;DR: In this paper, a mixture of phosphoric acid, fluoboric acid and glycerine was used to etch through regions of the superimposed layers defined by a photoresist masking layer.
6
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