Patent
Etching apparatus and etching method
Kwang-Myung Lee,Ki-Young Yun,Il-kyoung Kim,Sung-Wook Park,Seung-Ki Chae,No-Hyun Huh,Jae Wook Kim,Jae-Hyuck An,Woo-Seok Kim,Myeong-Jin Kim,Kyoung-Ho Jang,Shinji Yanagisawa,Kengo Tsutsumi,Seiichi Takahashi +13 more
- 10 Jan 2005
13
TL;DR: In this paper, a vacuum processing apparatus with a first gas introduction section is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer.
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Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
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Citations
Patent
Ion implanter with etch prevention member(s)
Il-kyoung Kim,No-Hyun Huh,Tae-Won Lee,Sung-Wook Park,Ki-Young Yun,Won-Soon Lee,Young-Ha Yoon,Tae-Sub Im +7 more
- 27 Aug 2007
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Yoshiyasu Tajima,Seiichi Takahashi,Kyuzo Nakamura +2 more
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TL;DR: In this paper, a processing method for removing an oxide film from an Si layer without adversely affecting portions other than the oxide film adhering to the Si layer, and also enabling to surely form an SiGe layer having good film quality without coarsening the crystal structure of the si layer surface after removal of the oxide films was presented.
5
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Substrate etching apparatus
Dae-Seung Mun,Joo-Heon Kim +1 more
- 15 Jul 2009
TL;DR: In this paper, a substrate etching apparatus includes a supporting unit for supporting substrate in a vertical position and an etching solution supply unit disposed above the substrate to supply an etch solution to the top of the substrate.
4
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Patent
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TL;DR: In this paper, the authors present several systems and methods for batch processing of micro-feature workpieces, e.g., semiconductor wafers or the like, such that a first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced.
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