Journal Article10.7567/APEX.6.034002
Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
Sansaptak Dasgupta,Jing Lu,Nidhi,Ajay Raman,Christophe A. Hurni,Geetak Gupta,James S. Speck,Umesh K. Mishra +7 more
TL;DR: In this paper, the authors reported the first estimation of hot electron relaxation time in GaN using electrical measurements, which matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering.
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Abstract: In this paper, we report for the first time an estimation of hot electron relaxation time in GaN using electrical measurements. Hot electron transistors (HETs) with GaN as the base layer and different base-emitter barrier-height configurations and base thicknesses were fabricated. Common-base measurements were performed to extract the differential transfer ratio, and an exponential decay of the transfer ratio with increasing base thickness was observed. A hot electron mean free path was extracted from the corresponding exponential fitting and a relaxation time was computed, which, for low energy injection, matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering.
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Citations
Hot electron relaxation dynamics in semiconductors: assessing the strength of the electron–phonon coupling from the theoretical and experimental viewpoints
TL;DR: This review aims to treat the progress in the understanding of the electron-phonon coupling which can be gained from both, on the basis of recently obtained results, and discusses the concept of hot electron ensemble, proposed recently to describe the hot-electron relaxation dynamics in GaAs.
68
Electron Transport Within III-V Nitride Semiconductors
Stephen K. O’Leary,Poppy Siddiqua,Walid A. Hadi,B. E. Foutz,Michael Shur,Lester F. Eastman +5 more
- 01 Jan 2017
TL;DR: In this article, the electron transport in III-V nitride semiconductors has been extensively studied, including the electron transfer in bulk wurtzite gallium, aluminum, and indium nitride.
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Electron-phonon relaxation and excited electron distribution in gallium nitride
TL;DR: In this article, the authors developed a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation and derived the equation for the non-equilibrium distribution function of excited electrons.
Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy
TL;DR: In this article, the results of vertical transport through nitride heterobarrier structures grown by ammonia molecular beam epitaxy are presented, where structures consisting of unintentionally doped GaN spacer layers adjacent to a nominally pure AlN are grown between two layers of n+ GaN, from which isotype diodes are fabricated.
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Inhomogeneous injection in III-nitride diode structures with deep quantum wells
Mikhail V. Kisin,Hussein S. El-Ghoroury +1 more
- 17 Oct 2013
TL;DR: In this article, the authors show that electron ballistic overshoot of narrow III-N QWs significantly improves the carrier transport in MQW active region but has controversial effect on QW population uniformity.
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Hot electron relaxation time in GaN
TL;DR: In this article, a femtosecond pump-probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored by a tunable near ultraviolet probe.
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