Journal Article10.1103/REVMODPHYS.54.437
Electronic properties of two-dimensional systems
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TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
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Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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References
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TL;DR: In this paper, the quantum size effect states of a symmetric film are found exactly for Dirichlet and Neumann (ψ = 0) boundary conditions, and the interpolation between these extremes is studied.
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Matthiessen's rule and its variation for cyclotron resonance width in two and three dimensions
Mahendra Prasad,S. Fujita +1 more
TL;DR: In this article, the authors derived cyclotron resonance widths associated with neighboring Landau states (n, n + 1) for free electrons in interaction with more than one kind of impurities.
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Electron dynamics in P-Si m.o.s.f.e.t. inversion channels
TL;DR: In this paper, an attempt was made in modelling at room temperature the carrier dynamics in the inversion layer using a Monte Carlo simulation and the interaction of inversion carriers with the surface was regarded successively as perfectly specular and perfectly diffuse.
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