Journal Article10.1103/REVMODPHYS.54.437
Electronic properties of two-dimensional systems
7.3K
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
read more
Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Density of states of a two dimensional electron gas in a high magnetic field studied with photoluminescence
TL;DR: In this paper, the density of a quasi two dimensional electron gas in magnetic fields up to 25 T is determined directly from photoluminescence measurements and can be described by Gaussian broadened Landau levels superimposed on a constant background.
25
Landau levels in 2D materials using Wannier Hamiltonians obtained by first principles
Jose L. Lado,Joaquín Fernández-Rossier +1 more
- 13 Sep 2016
TL;DR: In this article, the authors presented a method to calculate the Landau levels and the corresponding edge states of two-dimensional (2D) crystals using as a starting point their electronic structure as obtained from standard density functional theory.
25
Theories of electronic structure in semiconductor heterostructures
TL;DR: In this article, the authors take stock of the accomplishments of the phenomenological theories of the subband structures and the role of the interface in these theories, and discuss how such theories can be used in the interpretation of experiments and supplement first-principles calculations to gain an understanding of the influence of interface on the electronic properties.
25
Angle-resolved electron-energy-loss spectroscopy of two-dimensional plasmons
TL;DR: In this article, angle-resolved electron-energy-loss spectroscopy from solid-state surfaces is studied both theoretically and experimentally, with particular emphasis on the ZnO surface.
25
References
Self-Consistent Equations Including Exchange and Correlation Effects
Walter Kohn,L. J. Sham +1 more
TL;DR: In this paper, the Hartree and Hartree-Fock equations are applied to a uniform electron gas, where the exchange and correlation portions of the chemical potential of the gas are used as additional effective potentials.
Inhomogeneous Electron Gas
P. C. Hohenberg,Walter Kohn +1 more
TL;DR: In this article, the ground state of an interacting electron gas in an external potential was investigated and it was proved that there exists a universal functional of the density, called F[n(mathrm{r})], independent of the potential of the electron gas.
49.6K
Absence of Diffusion in Certain Random Lattices
TL;DR: In this article, a simple model for spin diffusion or conduction in the "impurity band" is presented, which involves transport in a lattice which is in some sense random, and in them diffusion is expected to take place via quantum jumps between localized sites.
13.1K
Ordering, metastability and phase transitions in two-dimensional systems
TL;DR: In this article, a new definition of order called topological order is proposed for two-dimensional systems in which no long-range order of the conventional type exists, and the possibility of a phase transition characterized by a change in the response of the system to an external perturbation is discussed in the context of a mean field type of approximation.
9.9K
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
7.4K