Journal Article10.1103/REVMODPHYS.54.437
Electronic properties of two-dimensional systems
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TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
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Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.
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References
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TL;DR: In this paper, the Hartree and Hartree-Fock equations are applied to a uniform electron gas, where the exchange and correlation portions of the chemical potential of the gas are used as additional effective potentials.
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49.6K
Absence of Diffusion in Certain Random Lattices
TL;DR: In this article, a simple model for spin diffusion or conduction in the "impurity band" is presented, which involves transport in a lattice which is in some sense random, and in them diffusion is expected to take place via quantum jumps between localized sites.
13.1K
Ordering, metastability and phase transitions in two-dimensional systems
TL;DR: In this article, a new definition of order called topological order is proposed for two-dimensional systems in which no long-range order of the conventional type exists, and the possibility of a phase transition characterized by a change in the response of the system to an external perturbation is discussed in the context of a mean field type of approximation.
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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