Journal Article10.1063/1.3696045
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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TL;DR: In this article, the performance and environmental effects on back-gated bi-layer MoS2 field effect transistors were investigated and it was shown that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances.
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Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
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Citations
Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices
Jeevesh Kumar,Hemanjaneyulu Kuruva,Harsha B. Variar,Utpreksh Patbhaje,Mayank Shrivastava +4 more
- 01 Mar 2023
TL;DR: In this article , an atomic-level insight into the vacancy-assisted interaction of TMDs with various ambient gases and its implications on the I-V hysteresis under different atmospheric, bias, and temperature conditions is presented.
Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams
Huarong Yang,Tong-Huai Cheng,Huijia Ouyang,Qian Xin,Yiyuan Liu,Miao Meng,Feng Luo,Zhitai Jia,Xutang Tao +8 more
TL;DR: Enhancement-mode phototransistors based on β-Ga2O3 microflakes fabricated by focused ion beams exhibit high performance with low dark current and high responsivity.
Atmospheric Degradation and Performance Recovery of Two‐dimensional MoS2 Field Effect Transistor
TL;DR: In this article , the performance degradation of 2D transition metal dichalcogenides (TMDCs) is attributed to surface oxidation of the contact metals with low work function, which increased the contact barrier and hindered the electron injection.
Ambient Effects on Photogating in MoS2 Photodetectors
Peize Han,Eli R Adler,Yijing Liu,Luke St. Marie,Abdel El Fatimy,Scott Melis,Edward Van Keuren,Paola Barbara +7 more
TL;DR: It is shown that, for wavelengths sufficiently short to excite electron-hole pairs in the MoS2, light illumination causes desorption of water and oxygen molecules, and the change in the molecular gating provided by the physisorbed molecules is the dominant contribution to the device photoresponse in ambient conditions.
•Dissertation
Phase-Engineered Field-Effect Transistors Based on Two-Dimensional Transition Metal Dichalcogenides
Rui Ma
- 01 Aug 2020
TL;DR: In this article, Koester et al. presented a Ph.D. dissertation on Electrical/Computer Engineering at the University of Minnesota, Bloomington, Minnesota, United States.
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