Journal Article10.1063/1.3696045
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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TL;DR: In this article, the performance and environmental effects on back-gated bi-layer MoS2 field effect transistors were investigated and it was shown that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances.
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Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
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Citations
Transition metal (Ti, Cu, Zn, Pt) single-atom modified graphene/AS2 (A=Mo, W) van der Waals heterostructures for removing airborne pollutants
Erika Camarillo-Salazar,Reyes Garcia-Diaz,María Teresa Romero de la Cruz,Yuliana Avila-Alvarado,Noe Fernandez-Escamilla,Gregorio H. Cocoletzi,J. Guerrero-Sanchez +6 more
TL;DR: Air pollution control through single-atom modified graphene/AS2 heterostructures. The heterostructures are effective in removing airborne pollutants.
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The activation of methane by Ni-Cu/MoO x for the synthesis of ethanol
TL;DR: In this article, Ni-Cu/MoOx was prepared by co-impregnation method and applied to the activation of methane and water to produce ethanol, which achieved a yield of 18.5 μmol at 240 °C, 2.5 MPa.
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Physical insight and performance metrics of monolayer MX 2 heterojunction TFETs
TL;DR: In this paper, the physics and performance of heterojunction n TFETs were studied using a quantum simulation and the imaginary wave vector revealed that WTe2-MoS2 TFET is the most promising source material with a 620 μA/μm drive current for a 0.3 volt gate swing.
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