Journal Article10.1063/1.3696045
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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TL;DR: In this article, the performance and environmental effects on back-gated bi-layer MoS2 field effect transistors were investigated and it was shown that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances.
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Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
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Citations
Localized Excitons in Zn-Porphyrin Covalently Functionalized MoS2 and WS2
Ruben Canton-Vitoria,Takato Hotta,Yuri Tanuma,Ioanna K. Sideri,Nikos Tagmatarchis,Christopher P. Ewels,Ryo Kitaura +6 more
TL;DR: In this paper , the authors successfully functionalized MoS2 and WS2 with Zn-porphyrin through 1,2-dithiolane addition, which creates mixed 0-2 dimensional materials since porphyrins are discrete on the basal plane of TMDs.
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Improved Interfacial and Electrical Properties of MoS 2 Transistor With High/Low-Temperature Grown Hf 0.5 Al 0.5 O as Top-Gate Dielectric
TL;DR: In this article, a uniform Hf0.5Al 0.5O top-gate (TG) dielectric can be grown directly on the MoS2 surface using a high/low-temperature deposition method.
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A brief review on thermally induced oxidation and oxidative etching of thin MoS2 crystals.
TL;DR: In this article , a review article summarizes the recent advancements in the research on thermally induced oxidation and oxidative etching of thin and single MoS2 flakes, particularly in sensing, optoelectronics and energy harvesting.
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Surface-engineered Mo2C: an ideal electrode for 2D semiconductor-based complementary circuit with Schottky-barrier-free contacts
TL;DR: In this article , a novel straightforward strategy has been provided to achieve CMOS logic functions and Schottky barrier-free contacts simultaneously in 2D FETs through modifying the surface electrical structure of Mo 2 C electrode with different groups.
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Wearable broadband MoS2 photodetector for dual heart rate and UV detection powered by PDMS-MXene TENG
Ali Mirsepah,Leyla Shooshtari,Raheleh Mohammadpour,Ali Esfandiar,Azam Iraji zad +4 more
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