Journal Article10.1063/1.3696045
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
608
TL;DR: In this article, the performance and environmental effects on back-gated bi-layer MoS2 field effect transistors were investigated and it was shown that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances.
read more
Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field
TL;DR: Theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application because of its ability to be significantly modulated by a perpendicular electric field.
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
TL;DR: Electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2 show strong temperature dependence consistent with phonon-dominated transport and intrinsic field-effect mobilities approaching 1000 cm(2)/(V·s) were observed for both monolayer and bilayer devices.
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
TL;DR: In this paper, the authors fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration.
640
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
TL;DR: In this article, the authors proposed two couples composed of monolayer transition metal dichalcogenides (TMDs) with sizable band gaps for low-power TFET applications.
631
Native defects in bulk and monolayer MoS 2 from first principles
TL;DR: In this paper, the formation energies of neutral and charged defects, determine the charge transition levels, and from these self-consistently assess the concentration of defects at thermal equilibrium as well as the resulting positions of the Fermi level.
References
The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
40.1K
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
15.2K
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
9.4K