Journal Article10.1063/1.3696045
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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TL;DR: In this article, the performance and environmental effects on back-gated bi-layer MoS2 field effect transistors were investigated and it was shown that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances.
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Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.
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Citations
Mechanically modulated tunneling resistance in monolayer MoS2
TL;DR: In this article, the modulation of tunneling resistance in MoS2 monolayers using a conductive atomic force microscope (AFM) is reported, which is attributed to enhanced quantum tunneling when the monolayer is compressed by the tip force.
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Inorganic Graphene Analogs
C. N. R. Rao,Urmimala Maitra +1 more
TL;DR: In this paper, the synthesis and properties of nanosheets composing single or few layers of metal chalcogenides, boron nitride, BxCyNz, metal oxides, and metal-organic frameworks are discussed.
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Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications.
TL;DR: Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process and provides a feasible solution for novel electronic and optoelectronic devices.
Strategy for Fabricating Wafer-Scale Platinum Disulfide.
Hongjun Xu,Hsin-Pan Huang,Haifeng Fei,Jiafeng Feng,Huei-Ru Fuh,Jiung Cho,Miri Choi,Yanhui Chen,Lei Zhang,Dengyun Chen,Duan Zhang,Cormac Ó Coileáin,Cormac Ó Coileáin,Xiufeng Han,Ching-Ray Chang,Han-Chun Wu +15 more
TL;DR: This work uses a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extends this method for the synthesis of PtS2 thin films in a scalable and controllable manner, and shows their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronic in a scaled manner.
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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack
Woojin Park,Jin Ho Yang,Chang Goo Kang,Young Gon Lee,Hyeon Jun Hwang,Chunhum Cho,Sung Kwan Lim,Soo Cheol Kang,Woong-Ki Hong,Sang Kyung Lee,Sangchul Lee,Byoung Hun Lee +11 more
TL;DR: The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al2O3 interfacial layer.
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