Journal Article10.1063/1.2234288
Effective work function modification of atomic-layer-deposited-TaN film by capping layer
Kisik Choi,Husam N. Alshareef,Husam N. Alshareef,Huang-Chun Wen,H.R. Harris,H. Luan,Y. Senzaki,P. Lysaght,Prashant Majhi,Prashant Majhi,Byoung Hun Lee,Byoung Hun Lee +11 more
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TL;DR: In this article, the authors demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate and show that the work function can be increased from 4.5 to 4.8eV with chemical-vapor-deposited-TiN capping.
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Abstract: We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5to4.8eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.
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Citations
Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials
TL;DR: High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery as mentioned in this paper, which is characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition).
Atomic Layer Deposition
Arto Pakkala,Matti Putkonen +1 more
- 01 Jan 2010
TL;DR: The Atomic Layer Deposition (ALD) method was developed for commercial use in Finland in the mid 1970s as mentioned in this paper, and was initially developed to enable production of thin film electroluminescent (TFEL) flat panel displays, and is currently also used for multiple other industrial applications, including semiconductor device manufacturing.
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Atomic layer-deposited platinum in high-k/metal gate stacks
TL;DR: In this paper, PVD and ALD-grown platinum films are homogeneous with a root mean square roughness of 0.6-0.7 nm and reveal a low resistivity of 13.2 µΩ cm.
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Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing
Youhei Sugimoto,Masanari Kajiwara,Keisuke Yamamoto,Yuusaku Suehiro,Dong Wang,Hiroshi Nakashima +5 more
TL;DR: In this article, the effective work function (Φm,eff) of TaN on HfO2 after postmetallization annealing (PMA) was investigated using TaN∕HfO 2 ∕SiO 2∕Si as a sample structure.
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Errors Limiting Split- $CV$ Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs
TL;DR: In this article, the authors analyzed the accuracy of the split-CV mobility extraction method in buried-channel InGaAs MOSFETs with a Al2O3 gate dielectric and an InP barrier, through a simulated experiment procedure using 2D numerical device simulations that are preliminarily calibrated against experimental I-V and CV curves.
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