Journal Article10.1016/0304-3991(95)00040-8
Dynamical electron diffraction in substitutionally disordered column structures
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TL;DR: In this article, a modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results, and the chemical composition of the material to statistical data of the HREM image.
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About: This article is published in Ultramicroscopy. The article was published on 01 Aug 1995. The article focuses on the topics: Channelling.
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Citations
Depth-Dependent Imaging of Individual Dopant Atoms in Silicon
TL;DR: Atomic-resolution imaging of single dopant atoms buried inside a crystal, a key goal for microelectronic device characterization, in Sb-doped Si using annular dark-field scanning transmission electron microscopy is achieved.
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On the interpretation of HREM images of partially ordered alloys
TL;DR: In this article, the ordering for 1 1 2 0 alloys has been studied by high-resolution electron microscopy (HREM) images and the distribution of the intensity maxima in the HREM image has been statistically examined, which provides a profound basis for the image interpretation.
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Short-range order in Al-rich γ-TiAl alloys studied by high-resolution transmission electron microscopy with image processing
Satoshi Hata,K. Higuchi,Masaru Itakura,Noriyuki Kuwano,Takayoshi Nakano,K. Hayashi,Yukichi Umakoshi +6 more
TL;DR: In this article, the atomic arrangements of short-range order (SRO) in two Al-rich γ-TiAl alloys with 62.5 and 60.0 at.
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Short range order structures in fcc-based Ni–Mo studied by high resolution transmission electron microscopy with image processing
TL;DR: In this article, high-resolution transmission electron microscopy was employed in study of short range order (SRO) in fcc-based Ni-Mo, which is classified as 1 1/2 0 alloy.
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HRTEM image contrast of short range order in Ni4Mo
TL;DR: The high resolution transmission electron microscope imaging of short range order (SRO) in Ni4Mo was investigated by means of multi-slice image simulations and revealed that the N2M2 patterns are rationalized as the projection patterns of the SRO structure which consists of subunit cell clusters of D1a, D022 and Pt2Mo structures.
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References
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Quantum mechanics: Non-relativistic theory,
Lev Davidovich Landau,E.M. Lifshitz,J.B. Sykes,John S. Bell,M. E. Rose +4 more
- 01 Jan 1965
TL;DR: The basic concepts of quantum mechanics Energy and momentum Schrodinger's equation Angular momentum Perturbation theory Spin The identity of particles The atom The theory of symmetry Polyatomic molecules Motion in a magnetic field Nuclear structure Elastic collisions Mathematical appendices.
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Interpretation of Electron Channeling by the Dynamical Theory of Electron Diffraction
TL;DR: In this article, the connection between electron channeling and electron diffraction is discussed on the basis of the dynamical theory, which can be shown properly by applying the tight-binding method of band theory in the two dimensions perpendicular to the axis.
107
The real space method for dynamical electron diffraction calculations in high resolution electron microscopy: II. Critical analysis of the dependency on the input parameters
W. Coene,D. Van Dyck +1 more
TL;DR: In this article, a new error criterion is introduced, which is based on comparison with an accurate reference calculation, and it becomes possible to set up a detailed study concerning the numerical parameters involved in the slice methods, which are the slice thickness and the number of dynamical reflections.
69
The real space method for dynamical electron diffraction calculations in high resolution electron microscopy: III. A computational algorithm for the electron propagation with its practical applications
W. Coene,D. Van Dyck +1 more
TL;DR: In this paper, a new and proper algorithm for the propagator is introduced by which the method becomes numerically equivalent and competitive in calculation speed with the multislice method, and a real space "patching" method is devised, by which dynamical electron diffraction in extended areas such as for crystal defects can be calculated in patches, hereby avoiding artificial periodic continuation and removing the limitations imposed by the computer memory.
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