Patent
Dynamic random access memory cell suitable for integration with semiconductor logic devices
Chingchi Yao,Chung-Jen Chien,Thomas Chao +2 more
- 22 Dec 1998
TL;DR: A dynamic random access memory (DRAM) cell includes first and second MOS transistors, such as a PMOS transistor and NMOS transistor in a CMOS cell as discussed by the authors, and one of the two transistors functions as a switch transistor while the other transistor is configured as a storage capacitor.
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Abstract: A dynamic random access memory (DRAM) cell includes first and second MOS transistors, such as a PMOS transistor and NMOS transistor in a CMOS cell. One of the two transistors functions as a switch transistor while the other transistor is configured as a storage capacitor. The DRAM cell may be integrated into a logic device, such as a CMOS gate array, using PMOS and NMOS transistor cells formed in the gate array. In that case, the DRAM cell may be fabricated in a logic device with the standard processes used to produce the logic device.
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References
Patent
Static random access memory cell having a thin film transistor (TFT) pass gate connection to a bit line
Ko-Min Chang,Bruce L. Morton,Clinton C. K. Kuo,Keith E. Witek,Kent J. Cooper +4 more
- 26 Jan 1999
TL;DR: The use of the transmission gate (24) as a select gate allows reads and writes to occur to a memory cell storage device (i.e. a capacitor (32), a floating gate (22), etc.) without a significant voltage drop occurring across a transmission gate as discussed by the authors.
41
Patent
Semiconductor memory with increased capacitive storage capabilities and reduced size
Naoki Ueda,Yoshimitsu Yamauchi,Kenichi Tanaka +2 more
- 10 Jun 1992
TL;DR: A semiconductor memory includes a transistor and a capacitor which are formed on a semiconductor substrate, wherein the capacitor comprises in superposed layers a first capacitor composed of an impurity diffused layer formed in a surface layer of the semiconductor substrategies, a first dielectric formed on the impurity diffuse layer and a lower plate electrode formed as a field plate as discussed by the authors.
3