Patent
Dopant Enhanced Interconnect
Rohan Akolkar,Sridhar Balakrishnan,Adrien R. Lavoie,Tejaswi K. Indukuri,James S. Clarke +4 more
- 12 Feb 2010
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TL;DR: In this article, an interconnect structure that is resistance to electromigration is described, where a lintern is deployed underneath a seed layer of the structure, and a dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer.
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Abstract: Techniques are disclosed that enable an interconnect structure that is resistance to electromigration. A liner is deployed underneath a seed layer of the structure. The liner can be a thin continuous and conformal layer, and may also limit oxidation of an underlying barrier (or other underlying surface). A dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer, and allows for dopant segregation at the interface at the top of the seed layer. Thus, electromigration performance is improved.
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Citations
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