1. What have the authors contributed in "Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates" ?
The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors.. Here, the authors report the development of a growth strategy based on the use of micrometric laserpierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond.. The authors show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 10 cm 2 in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.. For example, the growth of a wafer larger than 1 in. of single crystal diamond using the mosaic production method was reported.. Due to its exceptional chemical/physical properties, such as a wide bandgap energy, high breakdown electric field, high carrier mobility, high thermal conductivity, and low dielectric constant, Chemically Vapor Deposited ( CVD ) diamond is a promising material for applications in power electronic devices and particle detectors.
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